Dmitry Donetsky
Dmitry Donetsky
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Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
D Donetsky, SP Svensson, LE Vorobjev, G Belenky
Applied Physics Letters 95 (21), 212104, 2009
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
SP Svensson, D Donetsky, D Wang, H Hier, FJ Crowne, G Belenky
Journal of Crystal Growth 334 (1), 103-107, 2011
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
D Donetsky, G Belenky, S Svensson, S Suchalkin
Applied Physics Letters 97 (5), 052108, 2010
Quaternary InGaAsSb thermophotovoltaic diodes
MW Dashiell, JF Beausang, H Ehsani, GJ Nichols, DM Depoy, ...
IEEE Transactions on Electron Devices 53 (12), 2879-2891, 2006
High power heavily strained type-I quantum well GaSb-based diode lasers with more than of continuous wave output power and a maximum power …
L Shterengas, G Belenky, MV Kisin, D Donetsky
Applied physics letters 90 (1), 011119, 2007
Band gap of InAs 1− x Sb x with native lattice constant
SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ...
Physical Review B 86 (24), 245205, 2012
Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers
G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ...
Applied physics letters 99 (14), 141116, 2011
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials
I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Applied Physics Letters 108 (22), 222101, 2016
Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence
S Anikeev, D Donetsky, G Belenky, S Luryi, CA Wang, JM Borrego, ...
Applied physics letters 83 (16), 3317-3319, 2003
Room temperature operated type-I GaSb-based diode lasers with continuous-wave output power
L Shterengas, G Belenky, G Kipshidze, T Hosoda
Applied Physics Letters 92 (17), 171111, 2008
Molecular beam epitaxy control and photoluminescence properties of InAsBi
SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
High-power 2.3-μm GaSb-based linear laser array
L Shterengas, GL Belenky, A Gourevitch, D Donetsky, JG Kim, ...
IEEE Photonics Technology Letters 16 (10), 2218-2220, 2004
Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling
GL Belenky, CL Reynolds, DV Donetsky, GE Shtengel, MS Hybertsen, ...
IEEE journal of quantum electronics 35 (10), 1515-1520, 1999
Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region
D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ...
Applied Physics Letters 103 (5), 051120, 2013
Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures
D Donetsky, S Anikeev, G Belenky, S Luryi, CA Wang, G Nichols
Applied physics letters 81 (25), 4769-4771, 2002
Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
AD Andreev, DV Donetsky
Applied physics letters 74 (19), 2743-2745, 1999
Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications
G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ...
Applied Physics Letters 102 (11), 111108, 2013
Effect of quantum well compressive strain above 1% on differential gain and threshold current density in type-I GaSb-based diode lasers
J Chen, D Donetsky, L Shterengas, MV Kisin, G Kipshidze, G Belenky
IEEE Journal of Quantum Electronics 44 (12), 1204-1210, 2008
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys
G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ...
Infrared Technology and Applications XXXVII 8012, 318-327, 2011
Effect of heterobarrier leakage on the performance of high-power 1.5 μm InGaAsP multiple-quantum-well lasers
L Shterengas, R Menna, W Trussell, D Donetsky, G Belenky, J Connolly, ...
Journal of Applied Physics 88 (5), 2211-2214, 2000
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