Single-layer MoS2 transistors B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis Nature nanotechnology 6 (3), 147-150, 2011 | 16339 | 2011 |
Mobility engineering and metal-insulator transition in monolayer MoS2 B Radisavljevic, A Kis Nature Materials 12, 815-820, 2013 | 1972 | 2013 |
Integrated Circuits and Logic Operations Based on Single-Layer MoS2 B Radisavljevic, MB Whitwick, A Kis ACS nano 5 (12), 9934-9938, 2011 | 1584 | 2011 |
Visibility of dichalcogenide nanolayers MM Benameur, B Radisavljevic, JS Héron, S Sahoo, H Berger, A Kis Nanotechnology 22 (12), 125706, 2011 | 590 | 2011 |
i. V. Giacometti and A. Kis B Radisavljevic, A Radenovic, J Brivio Nat. Nanotechnol 6 (3), 147-150, 2011 | 313 | 2011 |
Small-signal amplifier based on single-layer MoS2 B Radisavljevic, MB Whitwick, A Kis Applied Physics Letters 101 (4), 2012 | 269 | 2012 |
Reply to 'Measurement of mobility in dual-gated MoS2 transistors' B Radisavljevic, A Kis Nature nanotechnology 8 (3), 147-148, 2013 | 141 | 2013 |
Semiconductor device A Kis, B Radisavljevic US Patent 9,608,101, 2017 | 99 | 2017 |
Nat. Nanotechnol. B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis Nat. Nanotechnol 6 (147), 2011 | 65 | 2011 |
Correction to Integrated Circuits and Logic Operations Based on Single-Layer MoS2 B Radisavljevic, MB Whitwick, A Kis Acs Nano 7 (4), 3729-3729, 2013 | 28 | 2013 |
ACS Nano 5, 9934 (2011) B Radisavljevic, MB Whitwick, A Kis Publisher Full Text OpenURL, 1936 | 10 | 1936 |
Response to comment" Measurement of mobility in dual-gated MoS2 transistors" B Radisavljevic, A Kis arXiv preprint arXiv:1301.4945, 2013 | 4 | 2013 |
Addendum: Small-signal amplifier based on single-layer MoS2 [Appl. Phys. Lett. 101, 043103 (2012)] B Radisavljevic, MB Whitwick, A Kis Applied Physics Letters 102 (5), 2013 | 3 | 2013 |
System for optical fiber strain measure M Dabbicco, G Scamarcio, S Ottonelli, A Intermite, B Radisavljevic US Patent 8,234,081, 2012 | 2 | 2012 |
MoS2-based devices and circuits B Radisavljevic, D Krasnozhon, MB Whitwick, A Kis 70th Device Research Conference, 179-180, 2012 | 2 | 2012 |
Reply to'Measurement of mobility in dual-gated MoS₂ transistors' B Radisavljevic, A Kis Nature nanotechnology 8 (3), 147-148, 2013 | 1 | 2013 |
Single-layer MoS₂: Electronics in Two Dimensions B Radisavljevic EPFL, 2013 | | 2013 |
Integrated circuits and logic operations with high room temperature voltage gain based on single-layer MoS2 A Kis, B Radisavljevic, M Whitwick APS March Meeting Abstracts 2012, Z17. 003, 2012 | | 2012 |
Semiconductor device A Kis, B Radisavljevic | | 2012 |
Electronic Devices with Dichalcogenide Nanolayers A Kis, B Radisavljevic, M Benameur, J Brivio APS March Meeting Abstracts 2011, J32. 007, 2011 | | 2011 |