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Branimir Radisavljevic
Branimir Radisavljevic
Hitachi Energy Switzerland
Verified email at hitachienergy.com
Title
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Cited by
Year
Single-layer MoS2 transistors
B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis
Nature nanotechnology 6 (3), 147-150, 2011
163392011
Mobility engineering and metal-insulator transition in monolayer MoS2
B Radisavljevic, A Kis
Nature Materials 12, 815-820, 2013
19722013
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
B Radisavljevic, MB Whitwick, A Kis
ACS nano 5 (12), 9934-9938, 2011
15842011
Visibility of dichalcogenide nanolayers
MM Benameur, B Radisavljevic, JS Héron, S Sahoo, H Berger, A Kis
Nanotechnology 22 (12), 125706, 2011
5902011
i. V. Giacometti and A. Kis
B Radisavljevic, A Radenovic, J Brivio
Nat. Nanotechnol 6 (3), 147-150, 2011
3132011
Small-signal amplifier based on single-layer MoS2
B Radisavljevic, MB Whitwick, A Kis
Applied Physics Letters 101 (4), 2012
2692012
Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
B Radisavljevic, A Kis
Nature nanotechnology 8 (3), 147-148, 2013
1412013
Semiconductor device
A Kis, B Radisavljevic
US Patent 9,608,101, 2017
992017
Nat. Nanotechnol.
B Radisavljevic, A Radenovic, J Brivio, V Giacometti, A Kis
Nat. Nanotechnol 6 (147), 2011
652011
Correction to Integrated Circuits and Logic Operations Based on Single-Layer MoS2
B Radisavljevic, MB Whitwick, A Kis
Acs Nano 7 (4), 3729-3729, 2013
282013
ACS Nano 5, 9934 (2011)
B Radisavljevic, MB Whitwick, A Kis
Publisher Full Text OpenURL, 1936
101936
Response to comment" Measurement of mobility in dual-gated MoS2 transistors"
B Radisavljevic, A Kis
arXiv preprint arXiv:1301.4945, 2013
42013
Addendum: Small-signal amplifier based on single-layer MoS2 [Appl. Phys. Lett. 101, 043103 (2012)]
B Radisavljevic, MB Whitwick, A Kis
Applied Physics Letters 102 (5), 2013
32013
System for optical fiber strain measure
M Dabbicco, G Scamarcio, S Ottonelli, A Intermite, B Radisavljevic
US Patent 8,234,081, 2012
22012
MoS2-based devices and circuits
B Radisavljevic, D Krasnozhon, MB Whitwick, A Kis
70th Device Research Conference, 179-180, 2012
22012
Reply to'Measurement of mobility in dual-gated MoS₂ transistors'
B Radisavljevic, A Kis
Nature nanotechnology 8 (3), 147-148, 2013
12013
Single-layer MoS₂: Electronics in Two Dimensions
B Radisavljevic
EPFL, 2013
2013
Integrated circuits and logic operations with high room temperature voltage gain based on single-layer MoS2
A Kis, B Radisavljevic, M Whitwick
APS March Meeting Abstracts 2012, Z17. 003, 2012
2012
Semiconductor device
A Kis, B Radisavljevic
2012
Electronic Devices with Dichalcogenide Nanolayers
A Kis, B Radisavljevic, M Benameur, J Brivio
APS March Meeting Abstracts 2011, J32. 007, 2011
2011
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