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Hisham Massoud
Hisham Massoud
Duke University - Dept of Elec and Comp Eng
Verified email at ee.duke.edu
Title
Cited by
Cited by
Year
Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I. Experimental Results
HZ Massoud, JD Plummer, EA Irene
Journal of the electrochemical society 132 (11), 2685, 1985
4231985
Electron trapping in SiO2 at 295 and 77 °K
DR Young, EA Irene, DJ DiMaria, RF De Keersmaecker, HZ Massoud
Journal of Applied Physics 50 (10), 6366-6372, 1979
2941979
Thermal oxidation of silicon in dry oxygen: accurate determination of the kinetic rate constants
HZ Massoud, JD Plummer, EA Irene
Journal of the Electrochemical Society 132 (7), 1745, 1985
2331985
Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II. Physical Mechanisms
HZ Massoud, JD Plummer, EA Irene
Journal of The Electrochemical Society 132 (11), 2693, 1985
1891985
Causes and prevention of temperature-dependent bubbles in silicon wafer bonding
K Mitani, V Lehmann, R Stengl, D Feijoo, UMGUM Gösele, ...
Japanese journal of applied physics 30 (4R), 615, 1991
1481991
Silicon oxidation studies: Silicon orientation effects on thermal oxidation
EA Irene, HZ Massoud, E Tierney
Journal of the Electrochemical Society 133 (6), 1253, 1986
1301986
The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation
Y Kim, HZ Massoud, RB Fair
Journal of electronic materials 18 (2), 143-150, 1989
1071989
Measurement and modeling of charge feedthrough in n-channel MOS analog switches
WB Wilson, HZ Massoud, EJ Swanson, RT George, RB Fair
IEEE journal of solid-state circuits 20 (6), 1206-1213, 1985
1001985
Analytical relationship for the oxidation of silicon in dry oxygen in the thin‐film regime
HZ Massoud, JD Plummer
Journal of applied physics 62 (8), 3416-3423, 1987
931987
An investigation of Si‐SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon
SC Vitkavage, EA Irene, HZ Massoud
Journal of applied physics 68 (10), 5262-5272, 1990
651990
Charge‐transfer dipole moments at the Si–SiO2 interface
HZ Massoud
Journal of applied physics 63 (6), 2000-2005, 1988
651988
Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
HZ Massoud, RK Sampson
US Patent 5,313,044, 1994
481994
Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording
JJ Mastrototaro, HZ Massoud, TC Pilkington, RE Ideker
IEEE transactions on biomedical engineering 39 (3), 271-279, 1992
481992
The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation
QH Liu, C Cheng, HZ Massoud
IEEE transactions on computer-aided design of integrated circuits and …, 2004
372004
Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency
R Deaton, HZ Massoud
IEEE transactions on semiconductor manufacturing 5 (4), 347-358, 1992
361992
Spectral element method for the Schrödinger-Poisson system
C Cheng, QH Liu, JH Lee, HZ Massoud
Journal of Computational Electronics 3 (3), 417-421, 2004
302004
The onset of the thermal oxidation of silicon from room temperature to 1000 C
HZ Massoud
Microelectronic Engineering 28 (1-4), 109-116, 1995
301995
Effect of thermally induced stresses on the rapid‐thermal oxidation of silicon
R Deaton, HZ Massoud
Journal of applied physics 70 (7), 3588-3592, 1991
291991
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
HZ Massoud, EH Poindexter, CR Helms
Electrochemical Society, 1996
271996
3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices
C Cheng, JH Lee, KH Lim, HZ Massoud, QH Liu
Journal of computational physics 227 (1), 455-471, 2007
262007
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Articles 1–20