Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes H Mazari, K Ameur, N Benseddik, Z Benamara, R Khelifi, M Mostefaoui, ... Sensors & Transducers 27 (5), 253, 2014 | 3 | 2014 |
Characteristics of Schottky Diode Detector based on Au/GaAs and Au/Inp application to radar detection system K Reguieg, Z Souar, R Becharef 2015 16th International Conference on Sciences and Techniques of Automatic …, 2015 | 2 | 2015 |
Comparison between MIM and Schottky diodes for use in high frequencies GB R. Becharef, S. Zegai International Review of PHYSICS (IREPHY) 4 (ISSN 1971-680X), 285-289, 2010 | 2* | 2010 |
Capacitance–frequency (CV–f) and conductance–frequency (GV–f) characteristics of Au/n-GaN freestanding Schottky structure H Mazari, K Ameur, R Khelifi, S Mansouri, N Benseddik, Z Benamara, ... Journal of New Technology and Materials 8 (1), 97-101, 2018 | 1 | 2018 |
Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures K Reguieg, Z Souar, R Becharef Journal of Nano-and Electronic Physics 9 (4), 4006-1, 2017 | | 2017 |
Réalisation et caractérisation d’un mélangeur subharmonique à diode en vue de dispositifs hyperfréquences intégrés R BECHAREF, Z SAUAR | | 2015 |
An original VGPI controller applied for speed control of an indirect field oriented induction machine drives FO Souar, R. Becharef journal I.RE.A.CO, International REview of Automatic COntrol theory and …, 2009 | | 2009 |