| Efficient and realistic device modeling from atomic detail to the nanoscale JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ... Journal of Computational Electronics 12 (4), 592-600, 2013 | 123 | 2013 |
| Machine-learned approximations to density functional theory hamiltonians G Hegde, RC Bowen Scientific reports 7 (1), 42669, 2017 | 86 | 2017 |
| III–V FET channel designs for high current densities and thin inversion layers M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ... 68th Device Research Conference, 149-152, 2010 | 45 | 2010 |
| An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I … G Hegde, M Povolotskyi, T Kubis, T Boykin, G Klimeck Journal of Applied Physics 115 (12), 2014 | 27 | 2014 |
| An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II … G Hegde, M Povolotskyi, T Kubis, J Charles, G Klimeck Journal Of Applied Physics 115 (12), 123704, 2014 | 27 | 2014 |
| Lower limits of line resistance in nanocrystalline back end of line Cu interconnects G Hegde, RC Bowen, MS Rodder Applied Physics Letters 109 (193106), 2016 | 25 | 2016 |
| Physical modeling of electronic devices/systems G Klimeck, M Povolotskyi, TC Kubis, G Hegde US Patent 9,858,365, 2018 | 19 | 2018 |
| Structure and method to achieve compressively strained Si NS JA Kittl, G Hegde, RC Bowen, BJ Obradovic, MS Rodder US Patent 9,831,323, 2017 | 19 | 2017 |
| Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts G Hegde, R Chris Bowen Applied Physics Letters 105 (5), 2014 | 19 | 2014 |
| III-V MOSFETs: Scaling laws, scaling limits, fabrication processes MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 17 | 2010 |
| Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts SH Park, N Kharche, D Basu, Z Jiang, SK Nayak, CE Weber, G Hegde, ... 71st Device Research Conference, 125-126, 2013 | 16 | 2013 |
| Low resistivity damascene interconnect G Hegde, MS Rodder, JA Kittl, RC Bowen US Patent 9,613,907, 2017 | 7 | 2017 |
| Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study G Hegde, G Klimeck, A Strachan Applied Physics Letters 99 (9), 2011 | 7 | 2011 |
| Generative structure-property inverse computational co-design of materials G Hegde, HS Simka US Patent 11,537,898, 2022 | 6 | 2022 |
| Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same G Hegde, M Rodder, R Sengupta, C Bowen US Patent 9,728,502, 2017 | 6 | 2017 |
| Fabricating metal source-drain stressor in a MOS device channel JA Kittl, G Hegde, MS Rodder US Patent 9,634,140, 2017 | 6 | 2017 |
| Structure and method to achieve large strain in NS without addition of stack-generated defects JA Kittl, G Hegde, RC Bowen, MS Rodder US Patent 10,283,638, 2019 | 5 | 2019 |
| Is electron transport in nanocrystalline Cu interconnects surface dominated or grain boundary dominated? G Hegde, RC Bowen, MS Rodder 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 5 | 2016 |
| The nanoelectronic modeling tool nemo 5: Capabilities, validation, and application to sb-heterostructures S Steiger, M Povolotskyi, HH Park, T Kubis, G Hegde, B Haley, M Rodwell, ... 69th Device Research Conference, 23-26, 2011 | 5 | 2011 |
| On the feasibility of ab initio electronic structure calculations for Cu using a single s orbital basis G Hegde, RC Bowen AIP Advances 5 (10), 2015 | 4 | 2015 |
