Zhang Haijun (张海军)
Zhang Haijun (张海军)
Подтвержден адрес электронной почты в домене nju.edu.cn
Название
Процитировано
Процитировано
Год
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
H Zhang, CX Liu, XL Qi, X Dai, Z Fang, SC Zhang
Nature physics 5 (6), 438-442, 2009
52742009
Experimental realization of a three-dimensional topological insulator, Bi2Te3
YL Chen, JG Analytis, JH Chu, ZK Liu, SK Mo, XL Qi, HJ Zhang, DH Lu, ...
Science 325 (5937), 178-181, 2009
32582009
Quantized anomalous Hall effect in magnetic topological insulators
R Yu, W Zhang, HJ Zhang, SC Zhang, X Dai, Z Fang
Science 329 (5987), 61-64, 2010
15052010
Large-gap quantum spin Hall insulators in tin films
Y Xu, B Yan, HJ Zhang, J Wang, G Xu, P Tang, W Duan, SC Zhang
Physical review letters 111 (13), 136804, 2013
10182013
Competing orders and spin-density-wave instability in La (O1− xFx) FeAs
J Dong, HJ Zhang, G Xu, Z Li, G Li, WZ Hu, D Wu, GF Chen, X Dai, JL Luo, ...
EPL (Europhysics Letters) 83 (2), 27006, 2008
8192008
Experimental demonstration of topological surface states protected by time-reversal symmetry
T Zhang, P Cheng, X Chen, JF Jia, X Ma, K He, L Wang, H Zhang, X Dai, ...
Physical Review Letters 103 (26), 266803, 2009
8112009
Model Hamiltonian for topological insulators
CX Liu, XL Qi, HJ Zhang, X Dai, Z Fang, SC Zhang
Physical Review B 82 (4), 045122, 2010
7522010
High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
CZ Chang, W Zhao, DY Kim, H Zhang, BA Assaf, D Heiman, SC Zhang, ...
Nature materials 14 (5), 473-477, 2015
5742015
Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
K Deng, G Wan, P Deng, K Zhang, S Ding, E Wang, M Yan, H Huang, ...
Nature Physics 12 (12), 1105, 2016
5052016
Oscillatory crossover from two-dimensional to three-dimensional topological insulators
CX Liu, HJ Zhang, B Yan, XL Qi, T Frauenheim, X Dai, Z Fang, SC Zhang
Physical review B 81 (4), 041307, 2010
4732010
First-principles studies of the three-dimensional strong topological insulators Bi2Te3, Bi2Se3 and Sb2Te3
W Zhang, R Yu, HJ Zhang, X Dai, Z Fang
New Journal of Physics 12 (6), 065013, 2010
4122010
Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit
YY Li, G Wang, XG Zhu, MH Liu, C Ye, X Chen, YY Wang, K He, LL Wang, ...
Advanced materials 22 (36), 4002-4007, 2010
3772010
Rapid surface oxidation as a source of surface degradation factor for Bi2Se3
D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister, Y Chen, HJ Zhang, ...
ACS nano 5 (6), 4698-4703, 2011
3072011
Single Dirac cone topological surface state and unusual thermoelectric property of compounds from a new topological insulator family
YL Chen, ZK Liu, JG Analytis, JH Chu, HJ Zhang, BH Yan, SK Mo, ...
Physical review letters 105 (26), 266401, 2010
2332010
Topological axion states in magnetic insulator MnBiTe with the quantized magnetoelectric effect
D Zhang, M Shi, K He, D Xing, H Zhang, J Wang
arXiv preprint arXiv:1808.08014, 2018
2172018
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
H Yuan, X Wang, B Lian, H Zhang, X Fang, B Shen, G Xu, Y Xu, ...
Nature nanotechnology 9 (10), 851-857, 2014
2142014
Symmetry-protected ideal Weyl semimetal in HgTe-class materials
J Ruan, SK Jian, H Yao, H Zhang, SC Zhang, D Xing
Nature communications 7, 11136, 2016
1872016
Theoretical prediction of topological insulators in thallium-based III-V-VI2 ternary chalcogenides
B Yan, CX Liu, HJ Zhang, CY Yam, XL Qi, T Frauenheim, SC Zhang
EPL (Europhysics Letters) 90 (3), 37002, 2010
1692010
Electronic structures and surface states of the topological insulator Bi 1− x Sb x
HJ Zhang, CX Liu, XL Qi, XY Deng, X Dai, SC Zhang, Z Fang
Physical Review B 80 (8), 085307, 2009
1302009
Pressure induced metallization with absence of structural transition in layered molybdenum diselenide
Z Zhao, H Zhang, H Yuan, S Wang, Y Lin, Q Zeng, G Xu, Z Liu, GK Solanki, ...
Nature communications 6, 2015
1222015
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20