| Ïîëóïðîâîäíèêîâûå ñåíñîðû â ôèçèêî-õèìè÷åñêèõ èññëåäîâàíèÿõ ÈÀ Ìÿñíèêîâ, Âß Ñóõàðåâ, ËÞ Êóïðèÿíîâ, ÑÀ Çàâüÿëîâ Íàóêà, 1991 | 241 | 1991 |
| Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage V Sukharev, W Uesato, JR Hu, W Hsia, L Qian US Patent 6,114,259, 2000 | 153 | 2000 |
| Microtrenching resulting from specular reflection during chlorine etching of silicon RJ Hoekstra, MJ Kushner, V Sukharev, P Schoenborn Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 142 | 1998 |
| Physics-based electromigration assessment for power grid networks X Huang, T Yu, V Sukharev, SXD Tan Proceedings of the 51st Annual Design Automation Conference, 1-6, 2014 | 137 | 2014 |
| Composite semiconductor gate dielectrics S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev US Patent 6,087,229, 2000 | 115 | 2000 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure V Sukharev, E Zschech, WD Nix Journal of Applied Physics 102 (5), 2007 | 110 | 2007 |
| Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh IA Myasnikov, VY Sukharev, LY Kupriyanov, SA Zav'yalov M.: Nauka, 327, 1991 | 109* | 1991 |
| Semiconductor Sensors in Physico-Chemical Studies: Translated from Russian by V. Yu. Vetrov LY Kupriyanov Elsevier, 1996 | 103 | 1996 |
| Power grid electromigration checking using physics-based models S Chatterjee, V Sukharev, FN Najm IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017 | 100 | 2017 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength V Sukharev, E Zschech Journal of Applied Physics 96 (11), 6337-6343, 2004 | 97 | 2004 |
| Concerning the role of oxygen in photocatalytic decomposition of salicylic acid in water V Sukharev, R Kershaw Journal of Photochemistry and Photobiology A: Chemistry 98 (3), 165-169, 1996 | 96 | 1996 |
| Multistep tungsten CVD process with amorphization step VY Sukharev, DJ Heine US Patent 5,804,249, 1998 | 89 | 1998 |
| Physics-based electromigration models and full-chip assessment for power grid networks X Huang, A Kteyan, SXD Tan, V Sukharev IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2016 | 79 | 2016 |
| Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide MR Mirabedini, V Sukharev US Patent 7,138,292, 2006 | 78 | 2006 |
| Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same S Aronowitz, V Sukharev, J Owyang, J Haywood US Patent 5,837,598, 1998 | 70 | 1998 |
| Beyond Black’s equation: Full-chip EM/SM assessment in 3D IC stack V Sukharev Microelectronic Engineering 120, 99-105, 2014 | 69 | 2014 |
| Method of forming variable thickness gate dielectrics S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev US Patent 6,033,998, 2000 | 66 | 2000 |
| Analytical Modeling and Characterization of Electromigration Effects for Multi-Branch Interconnect Trees HB Chen, S Tan, X Huang, T Kim, V Sukharev IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2016 | 64 | 2016 |
| Microstructure effect on EM-induced degradations in dual inlaid copper interconnects V Sukharev, A Kteyan, E Zschech, WD Nix IEEE Transactions on Device and Materials Reliability 9 (1), 87-97, 2009 | 57 | 2009 |
| Post-voiding stress evolution in confined metal lines V Sukharev, A Kteyan, X Huang IEEE Transactions on Device and Materials Reliability 16 (1), 50-60, 2016 | 55 | 2016 |
Sheldon X.-D. TanUniversity of California at RiversideVerified email at ece.ucr.edu
