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Valeriy Sukharev
Valeriy Sukharev
Chief Scientist/Fellow, Siemens EDA
Verified email at siemens.com - Homepage
Title
Cited by
Cited by
Year
-
, , ,
, 1991
2411991
Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
V Sukharev, W Uesato, JR Hu, W Hsia, L Qian
US Patent 6,114,259, 2000
1532000
Microtrenching resulting from specular reflection during chlorine etching of silicon
RJ Hoekstra, MJ Kushner, V Sukharev, P Schoenborn
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer, 1998
1421998
Physics-based electromigration assessment for power grid networks
X Huang, T Yu, V Sukharev, SXD Tan
Proceedings of the 51st Annual Design Automation Conference, 1-6, 2014
1362014
Composite semiconductor gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,087,229, 2000
1152000
Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh
IA Myasnikov, VY Sukharev, LY Kupriyanov, SA Zav'yalov
M.: Nauka, 327, 1991
109*1991
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure
V Sukharev, E Zschech, WD Nix
Journal of Applied Physics 102 (5), 2007
1082007
Power grid electromigration checking using physics-based models
S Chatterjee, V Sukharev, FN Najm
IEEE Transactions on Computer-Aided Design of Integrated Circuits and, 2017
972017
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength
V Sukharev, E Zschech
Journal of Applied Physics 96 (11), 6337-6343, 2004
972004
Concerning the role of oxygen in photocatalytic decomposition of salicylic acid in water
V Sukharev, R Kershaw
Journal of Photochemistry and Photobiology A: Chemistry 98 (3), 165-169, 1996
951996
Semiconductor Sensors in Physico-Chemical Studies: Translated from Russian by V. Yu. Vetrov
LY Kupriyanov
Elsevier, 1996
951996
Multistep tungsten CVD process with amorphization step
VY Sukharev, DJ Heine
US Patent 5,804,249, 1998
871998
Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
MR Mirabedini, V Sukharev
US Patent 7,138,292, 2006
802006
Physics-based electromigration models and full-chip assessment for power grid networks
X Huang, A Kteyan, SXD Tan, V Sukharev
IEEE Transactions on Computer-Aided Design of Integrated Circuits and, 2016
782016
Beyond Blacks equation: Full-chip EM/SM assessment in 3D IC stack
V Sukharev
Microelectronic Engineering 120, 99-105, 2014
702014
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
S Aronowitz, V Sukharev, J Owyang, J Haywood
US Patent 5,837,598, 1998
701998
Method of forming variable thickness gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,033,998, 2000
672000
Analytical Modeling and Characterization of Electromigration Effects for Multi-Branch Interconnect Trees
HB Chen, S Tan, X Huang, T Kim, V Sukharev
IEEE Transactions on Computer-Aided Design of Integrated Circuits and, 2016
632016
Microstructure effect on EM-induced degradations in dual inlaid copper interconnects
V Sukharev, A Kteyan, E Zschech, WD Nix
IEEE Transactions on Device and Materials Reliability 9 (1), 87-97, 2009
572009
Post-voiding stress evolution in confined metal lines
V Sukharev, A Kteyan, X Huang
IEEE Transactions on Device and Materials Reliability 16 (1), 50-60, 2016
552016
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