Metal oxide semiconductor structure using oxygen-terminated diamond G Chicot, A Maréchal, R Motte, P Muret, E Gheeraert, J Pernot Applied Physics Letters 102 (24), 2013 | 69 | 2013 |
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor A Maréchal, M Aoukar, C Vallée, C Rivière, D Eon, J Pernot, E Gheeraert Applied Physics Letters 107 (14), 2015 | 48 | 2015 |
Model implementation towards the prediction of J (V) characteristics in diamond bipolar device simulations A Maréchal, N Rouger, JC Crebier, J Pernot, S Koizumi, T Teraji, ... Diamond and related materials 43, 34-42, 2014 | 45 | 2014 |
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot Journal of Applied Physics 123 (16), 2018 | 44 | 2018 |
Diamond semiconductor performances in power electronics applications G Perez, A Maréchal, G Chicot, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 110, 108154, 2020 | 33 | 2020 |
Potential barrier heights at metal on oxygen-terminated diamond interfaces P Muret, A Traoré, A Maréchal, D Eon, J Pernot, JC Pinẽro, MP Villar, ... Journal of Applied Physics 118 (20), 2015 | 26 | 2015 |
Design of diamond power devices: Application to Schottky barrier diodes N Rouger, A Maréchal Energies 12 (12), 2387, 2019 | 25 | 2019 |
Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior JC Piñero, D Araujo, A Traoré, G Chicot, A Maréchal, P Muret, MP Alegre, ... physica status solidi (a) 211 (10), 2367-2371, 2014 | 15 | 2014 |
Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy A Maréchal, Y Kato, M Liao, S Koizumi Applied Physics Letters 111 (14), 2017 | 9 | 2017 |
Impact of nonhomoepitaxial defects in depleted diamond MOS capacitors TT Pham, JC Piñero, A Marechal, M Gutiérrez, F Lloret, D Eon, ... IEEE Transactions on Electron Devices 65 (5), 1830-1837, 2018 | 8 | 2018 |
Diamond bipolar device simulation A Maréchal, N Rouger, JC Crébier, J Pernot, S Koizumi, T Teraji, ... The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 151-154, 2013 | 6 | 2013 |
High temperature operation of a monolithic bidirectional diamond switch C Masante, J Pernot, A Maréchal, N Rouger Diamond and Related Materials 111, 108185, 2021 | 5 | 2021 |
Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures P Muret, D Eon, A Traoré, A Maréchal, J Pernot, E Gheeraert physica status solidi (a) 212 (11), 2501-2506, 2015 | 5 | 2015 |
Diamond Schottky barrier diodes for power electronics applications G Perez, J Letellier, A Maréchal, D Eon, G Chicot, PO Jeannin, N Rouger, ... 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1956-1963, 2018 | 4 | 2018 |
Metal-oxide-semiconductor capacitor for diamond transistor: simulation, fabrication and electrical analysis A Maréchal Université Grenoble Alpes, 2015 | 3 | 2015 |
Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamond A Marechal, G Chicot, N Rouger, P Muret, J Pernot, E Gheeraert International Conference on Diamond and Carbon Materials, 2014 | 1 | 2014 |
Parameter adjustment for diamond electronic devices simulation A Maréchal, N Clement, JP Rouger, E Gheeraert, JC Crébier, J Pernot, ... XVIIIth SBDD 2013, 2013 | 1 | 2013 |
Diodes Schottky en Diamant: augmentation du calibre en courant et parallélisation G Perez, J Letellier, A Maréchal, D Eon, G Chicot, PO Jeannin, ... Symposium de Génie Electrique, 2018 | | 2018 |
Diamond Schottky diodes interactions in power electronics application G Perez, J Letellier, A Maréchal, PO Jeannin, P Lefranc, D Eon, ... MRS 2017 Fall Meeting, 2017 | | 2017 |
Simulation numérique et caractérisation de composants de puissance en diamant N Clément, JP Rouger, A Maréchal, G Chicot, G Perez, TT Pham, ... Symposium de Genie Electrique, 2016 | | 2016 |