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Askar Rezvanov
Askar Rezvanov
Подтвержден адрес электронной почты в домене phystech.edu
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Процитировано
Год
Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas
A Rezvanov, AV Miakonkikh, AS Vishnevskiy, KV Rudenko, MR Baklanov
Journal of Vacuum Science & Technology B 35 (2), 2017
302017
Evaluation of mechanical properties of porous OSG films by PFQNM AFM and benchmarking with traditional instrumentation
IS Ovchinnikov, AS Vishnevskiy, DS Seregin, AA Rezvanov, D Schneider, ...
Langmuir 36 (32), 9377-9387, 2020
282020
Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
AA Rezvanov, AV Miakonkikh, DS Seregin, AS Vishnevskiy, KA Vorotilov, ...
Journal of Vacuum Science & Technology A 38 (3), 2020
162020
Benzene bridged hybrid organosilicate films with improved stiffness and small pore size
AA Rezvanov, AS Vishnevskiy, DS Seregin, D Schneider, AA Lomov, ...
Materials Chemistry and Physics 290, 126571, 2022
112022
Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface
A Rezvanov, ES Gornev, JF de Marneffe, S Armini
Applied Surface Science 476, 317-324, 2019
112019
Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach
A Zotovich, A Rezvanov, R Chanson, L Zhang, N Hacker, K Kurchikov, ...
Journal of Physics D: Applied Physics 51 (32), 325202, 2018
92018
Pore surface grafting of porous low-k dielectrics by selective polymers
JFGNGM Askar Rezvanov, Liping Zhang, Mitsuhiro Watanabe, Mikhail B. Krishtab ...
Journal of Vacuum Science & Technology B http://avs.scitation.org/doi/full …, 2017
92017
Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission
AI Zotovich, SM Zyryanov, DV Lopaev, AA Rezvanov, AG Attallah, ...
ACS Applied Electronic Materials 4 (6), 2760-2776, 2022
42022
Атомно-слоевое осаждение тонких пленок оксида гафния с использованием установки «Изофаз Т. 200-01»
СС ЗЮЗИН, ЯГ ЗАССЕЕВ, АА РЕЗВАНОВ, ВВ ПАНИН, ВА ГВОЗДЕВ, ...
Наноиндустрия 15 (S8-2), 548-552, 2022
42022
Use of a thermally degradable chemical vapor deposited polymer film for low damage plasma processing of highly porous dielectrics
JF Marneffe, T Yamaguchi, M Fujikawa, A Rezvanov, R Chanson, J Zhang, ...
ACS Applied Electronic Materials 1 (12), 2602-2611, 2019
42019
Изобары адсорбции фторуглеродных соединений, выбранных для криогенного плазменного травления low-k диэлектриков
АА Резванов, ОП Гущин, ЕС Горнев, ГЯ Красников, КП Могильников, ...
Электронная техника, серия: Микроэлектроника 3 (1(157)), 49, 2015
42015
Cellular-automata model of oxygen plasma impact on porous low-K dielectric
A Rezvanov, IV Matyushkin, OP Gutshin, ES Gornev
International Conference on Micro-and Nano-Electronics 2016 10224, 483-492, 2016
32016
Клеточно-автоматная модель воздействия O2 плазмы на интегральные свойства SiOCH low-К диэлектрика
А Резванов, ИВ Матюшкин, ОП Гущин
Электронная техника. Серия 3: Микроэлектроника 3 (163), 63-78, 2016
32016
Adsorption isobars of fluorocarbon compounds selected for cryogenic plasma etching of low-k dielectrics
AA Rezvanov, KP Mogilnikov, OP Gutshin, ES Gornev, GY Krasnikov, ...
Spring Meeting and Exhibit MRS-2015, 2015
32015
Cellular automata model of O2 plasma treatment influence on the integral properties of SiOCH low-K dielectric
A Rezvanov, IV Matyushkin, OP Gutshin
Electronic engineering. Series 3, 63-78, 0
3
Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system
SS Zyuzin, YG Zasseev, AA Rezvanov, VV Panin, VA Gvozdev, ...
International Conference on Micro-and Nano-Electronics 2021 12157, 400-406, 2022
22022
Investigation of conductive filament growth and rupture in ReRAM structures based on hafnium oxide
EA Ganykina, AA Rezvanov, YS Gornev
International Conference on Micro-and Nano-Electronics 2021 12157, 89-94, 2022
22022
Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System
AA Orlov, AA Rezvanov, VA Gvozdev, GA Orlov, DS Seregin, ...
Russian Microelectronics 51 (6), 470-479, 2022
12022
Исследование термических эффектов в HfO2 RRAM-структурах в процессе Reset
ЕА Ганыкина, ЕС Горнев, АА Резванов
Наноиндустрия 13 (S5-3), 812-815, 2020
12020
Gas Phase Pore Stuffing for the protection of organo-silicate glass dielectric materials
M Fujikawa, JF de Marneffe, R Chanson, KB Gavan, A Rezvanov, ...
2018 International Symposium on Semiconductor Manufacturing (ISSM), 1-3, 2018
12018
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