Guillaume Rosaz, PhD
Guillaume Rosaz, PhD
CERN - TE/VSC/SCC - Geneva
Подтвержден адрес электронной почты в домене cern.ch - Главная страница
FCC-ee: the lepton collider: future circular collider conceptual design report volume 2
AEA Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ...
The European Physical Journal Special Topics 228, 261-623, 2019
FCC physics opportunities
A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal C 79 (6), 1-161, 2019
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
High-performance silicon nanowire field-effect transistor with silicided contacts
G Rosaz, B Salem, N Pauc, P Gentile, A Potié, A Solanki, T Baron
Semiconductor science and technology 26 (8), 085020, 2011
Controlled growth of SiGe nanowires by addition of HCl in the gas phase
A Potié, T Baron, L Latu-Romain, G Rosaz, B Salem, L Montes, P Gentile, ...
Journal of Applied Physics 110 (2), 024311, 2011
Development of sputtered Nb3Sn films on copper substrates for superconducting radio-frequency applications
Katsiaryna Ilyina-Brunner, Guillaume Rosaz, Josep Busom Descarrega ...
Superconductor Science and Technology, 2018
Vertically integrated silicon-germanium nanowire field-effect transistor
G Rosaz, B Salem, N Pauc, A Potié, P Gentile, T Baron
Applied Physics Letters 99 (19), 193107, 2011
Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires
G Rosaz, B Salem, N Pauc, P Gentile, A Potié, T Baron
Microelectronic Engineering 88 (11), 3312-3315, 2011
European Strategy for Particle Physics--Accelerator R&D Roadmap
C Adolphsen, D Angal-Kalinin, T Arndt, M Arnold, R Assmann, ...
arXiv preprint arXiv:2201.07895, 2022
Geometrical control of photocurrent in active Si nanowire devices
A Solanki, P Gentile, V Calvo, G Rosaz, B Salem, V Aimez, D Drouin, ...
Nano Energy 1 (5), 714-722, 2012
Fabrication and characterization of silicon nanowire pin MOS gated diode for use as p-type tunnel FET
V Brouzet, B Salem, P Periwal, G Rosaz, T Baron, F Bassani, P Gentile, ...
Applied Physics A 121, 1285-1290, 2015
Performance analysis of superconducting rf cavities for the CERN rare isotope accelerator
S Calatroni, A Miyazaki, G Rosaz, A Sublet, WV Delsolaro, R Vaglio, ...
Physical Review Accelerators and Beams 19 (9), 092002, 2016
The influence of cooldown conditions at transition temperature on the quality factor of niobium sputtered quarter-wave resonators for HIE-ISOLDE
P Zhang, A Sublet, W Venturini Delsolaro, M Therasse, G Rosaz
Next-generation superconducting RF technology based on advanced thin film technologies and innovative materials for accelerator enhanced performance and energy reach
AM Valente-Feliciano, C Antoine, S Anlage, G Ciovati, J Delayen, ...
arXiv preprint arXiv:2204.02536, 2022
Development of NbSn coatings by magnetron sputtering for SRF cavities
G Rosaz, M Taborelli, F Leaux, Z Mydlarz, F Motschmann, S Calatroni, ...
Developments on SRF coatings at CERN
A Sublet, W Venturini Delsolaro, M Therasse, T Richard, G Rosaz, S Aull, ...
Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires
A Potié, T Baron, F Dhalluin, G Rosaz, B Salem, L Latu-Romain, ...
Nanoscale research letters 6, 1-9, 2011
Thin film (high temperature) superconducting radiofrequency cavities for the search of axion dark matter
J Golm, SA Cuendis, S Calatroni, C Cogollos, B Döbrich, JD Gallego, ...
IEEE Transactions on Applied Superconductivity 32 (4), 1-5, 2022
Nanowire-based Transistor, Method for Fabricating the Transistor, Semiconductor Component Incorporating the Transistor, Computer Program and Storage Medium Associated with the …
G Rosaz, P Gentile, T Baron, B Salem, N Pauc
US Patent App. 13/902,223, 2013
Status of HIE-ISOLDE sc linac upgrade
A Sublet, W Venturini Delsolaro, M Fraser, L Alberty, Y Kadi, N Jecklin, ...
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