FCC-ee: the lepton collider: future circular collider conceptual design report volume 2 AEA Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ...
The European Physical Journal Special Topics 228, 261-623, 2019
1105 * 2019 FCC physics opportunities A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal C 79 (6), 1-161, 2019
554 2019 Effect of HCl on the doping and shape control of silicon nanowires P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
89 2012 High-performance silicon nanowire field-effect transistor with silicided contacts G Rosaz, B Salem, N Pauc, P Gentile, A Potié, A Solanki, T Baron
Semiconductor science and technology 26 (8), 085020, 2011
58 2011 Development of sputtered Nb3Sn films on copper substrates for superconducting radio-frequency applications Katsiaryna Ilyina-Brunner, Guillaume Rosaz, Josep Busom Descarrega ...
Superconductor Science and Technology, 2018
54 * 2018 European Strategy for Particle Physics--Accelerator R&D Roadmap C Adolphsen, D Angal-Kalinin, T Arndt, M Arnold, R Assmann, ...
arXiv preprint arXiv:2201.07895, 2022
50 2022 Controlled growth of SiGe nanowires by addition of HCl in the gas phase A Potié, T Baron, L Latu-Romain, G Rosaz, B Salem, L Montes, P Gentile, ...
Journal of Applied Physics 110 (2), 2011
39 2011 Vertically integrated silicon-germanium nanowire field-effect transistor G Rosaz, B Salem, N Pauc, A Potié, P Gentile, T Baron
Applied Physics Letters 99 (19), 2011
35 2011 Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires G Rosaz, B Salem, N Pauc, P Gentile, A Potié, T Baron
Microelectronic Engineering 88 (11), 3312-3315, 2011
25 2011 Next-generation superconducting RF technology based on advanced thin film technologies and innovative materials for accelerator enhanced performance and energy reach AM Valente-Feliciano, C Antoine, S Anlage, G Ciovati, J Delayen, ...
arXiv preprint arXiv:2204.02536, 2022
20 2022 Geometrical control of photocurrent in active Si nanowire devices A Solanki, P Gentile, V Calvo, G Rosaz, B Salem, V Aimez, D Drouin, ...
Nano Energy 1 (5), 714-722, 2012
19 2012 Thin film (high temperature) superconducting radiofrequency cavities for the search of axion dark matter J Golm, SA Cuendis, S Calatroni, C Cogollos, B Döbrich, JD Gallego, ...
IEEE Transactions on Applied Superconductivity 32 (4), 1-5, 2022
18 2022 Fabrication and characterization of silicon nanowire pin MOS gated diode for use as p-type tunnel FET V Brouzet, B Salem, P Periwal, G Rosaz, T Baron, F Bassani, P Gentile, ...
Applied Physics A 121, 1285-1290, 2015
17 2015 Enhanced radio-frequency performance of niobium films on copper substrates deposited by high power impulse magnetron sputtering M Arzeo, F Avino, S Pfeiffer, G Rosaz, M Taborelli, L Vega-Cid, ...
Superconductor Science and Technology 35 (5), 054008, 2022
14 2022 Development of Nb G Rosaz, M Taborelli, F Leaux, Z Mydlarz, F Motschmann, S Calatroni, ...
14 2016 Performance analysis of superconducting rf cavities for the CERN rare isotope accelerator S Calatroni, A Miyazaki, G Rosaz, A Sublet, WV Delsolaro, R Vaglio, ...
Physical Review Accelerators and Beams 19 (9), 092002, 2016
13 2016 Developments on SRF coatings at CERN A Sublet, W Venturini Delsolaro, M Therasse, T Richard, G Rosaz, S Aull, ...
12 2015 The influence of cooldown conditions at transition temperature on the quality factor of niobium sputtered quarter-wave resonators for HIE-ISOLDE P Zhang, A Sublet, W Venturini Delsolaro, M Therasse, G Rosaz
11 2015 Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires A Potié, T Baron, F Dhalluin, G Rosaz, B Salem, L Latu-Romain, ...
Nanoscale research letters 6, 1-9, 2011
10 2011 Niobium thin film thickness profile tailoring on complex shape substrates using unbalanced biased High Power Impulse Magnetron Sputtering G Rosaz, A Bartkowska, CPA Carlos, T Richard, M Taborelli
Surface and Coatings Technology 436, 128306, 2022
9 2022 
Amit SolankiHarvard UniversityПодтвержден адрес электронной почты в домене seas.harvard.edu
