| Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs AI Titov, KV Karabeshkin, AI Struchkov, VI Nikolaev, A Azarov, DS Gogova, ... Vacuum 200, 111005, 2022 | 30 | 2022 |
| Interplay of the disorder and strain in gallium oxide A Azarov, V Venkatachalapathy, P Karaseov, A Titov, K Karabeshkin, ... Scientific Reports 12 (1), 15366, 2022 | 14 | 2022 |
| The formation of radiation damage in GaN during successive bombardment by light ions of various energies AI Titov, PA Karaseov, KV Karabeshkin, AI Struchkov Vacuum 173, 109149, 2020 | 8 | 2020 |
| Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? AI Titov, KV Karabeshkin, PA Karaseov, AI Struchkov Semiconductors 53 (11), 1415-1418, 2019 | 7 | 2019 |
| Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms AI Titov, KV Karabeshkin, AI Struchkov, PA Karaseov, A Azarov Journal of Physics D: Applied Physics 55 (17), 175103, 2022 | 3 | 2022 |
| Degradation of GaN Conductivity Under Irradiation with Swift Ions PA Karaseov, A Kumar, AI Struchkov, AI Titov, K Asokan, D Kanjilal, ... International Youth Conference on Electronics, Telecommunications and …, 2021 | 3 | 2021 |
| Molecular Effect in Damage Formation in β-Ga2O3 KV Karabeshkin, AI Struchkov, AI Titov, A Azarov, DS Gogova, ... International Youth Conference on Electronics, Telecommunications and …, 2022 | 2 | 2022 |
| НАКОПЛЕНИЕ СТРУКТУРНЫХ НАРУШЕНИЙ ПРИ ОБЛУЧЕНИИ α-GA 2 O 3 ИОНАМИ P И PF 4 ПА КАРАСЕВ, КВ КАРАБЕШКИН, АИ СТРУЧКОВ, АИ ПЕЧНИКОВ, ... | 1 | 2022 |
| Impact of Chemical Effects on Topography and Thickness of Modified GaN Surface Layers Bombarded by F and Ne Ions AI Struchkov, KV Karabeshkin, AV Arkhipov, VA Filatov, PA Karaseov, ... International Youth Conference on Electronics, Telecommunications and …, 2021 | 1 | 2021 |
| Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment PA Karaseov, KV Karabeshkin, AI Struchkov, AI Pechnikov, VI Nikolaev, ... Semiconductors 57 (10), 459-464, 2023 | | 2023 |
| RADIATION DAMAGE ACCUMULATION IN α-Ga2O3 UNDER keV ION BOMBARDMENT AI Struchkov, AI Titov, AI Klevtsov, KV Karabeshkin, ED Fedorenko, ... Взаимодействие ионов с поверхностью" ВИП-2023", 211-213, 2023 | | 2023 |
| Comparative Study of Ion-Induced Damage Formation in GaN and beta-Ga2O3 KV Karabeshkin, PA Karaseov, AI Struchkov, AI Titov, A Azarov, ... International Youth Conference on Electronics, Telecommunications and …, 2022 | | 2022 |
| Centers of cold electron emission from molybdenum thin films IS Bizyaev, VS Osipov, VY Babyuk, AI Struchkov, NM Gnuchev Journal of Physics: Conference Series 1851 (1), 012022, 2021 | | 2021 |
| Nitrides vs oxides: ion-induced damage formation in GaN and Ga2O3 AI Titov, KV Karabeshkin, PA Karaseov, AI Struchkov, AI Pechnikov, ... Взаимодействие ионов с поверхностью ВИП-2021, 161-164, 2021 | | 2021 |
| AMOPRHIZATION OF GaN DURING CONSECUTIVE IRRADIATION BY IONS OF DIFFERENT TYPES AND ENERGIES AI Titov, KV Karabeshkin, AI Struchkov, PA Karaseov, A Azarov Взаимодействие ионов с поверхностью ВИП-2021, 55-58, 2021 | | 2021 |
| РАДИАЦИОННОЕ ПОВРЕЖДЕНИЕ GaN ПРИ КОМБИНИРОВАННОМ ОБЛУЧЕНИИ ИОНАМИ РАЗЛИЧНЫХ ТИПОВ И ЭНЕРГИЙ АИ Стручков, АИ Титов, КВ Карабешкин, ПА Карасев НЕДЕЛЯ НАУКИ ИФНиТ, 109-111, 2020 | | 2020 |
| Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? KV Karabeshkin, PA Karaseov, AI Struchkov Semiconductors (Woodbury, NY, Print) 53 (11), 2019 | | 2019 |
| Accumulation of structural disorders under irradiation of GaN by fluorine and neon ions AI Titov, KV Karabeshkin, PA Karasev, AI Struchkov Summaries of reports of XLIX International Tulinov conference on physics of …, 2019 | | 2019 |
| Generation of structural defects in GaN by co-implantation of light ions of different energies AI Titov, KV Karabeshkin, PA Karasev, AI Struchkov Summaries of reports of XLIX International Tulinov conference on physics of …, 2019 | | 2019 |
| Влияют ли химические эффекты на накопление структурных нарушений при имплантации в GaN ионов фтора? АИ Титов, КВ Карабешкин, ПА Карасев, АИ Стручков Физика и техника полупроводников 53 (11), 1455-1458, 2019 | | 2019 |
Platon Karaseov (Карасев П.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU), Department of Physical ElectronicsПодтвержден адрес электронной почты в домене spbstu.ru
