| High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation J Wu, HY Chen, N Yang, J Cao, X Yan, F Liu, Q Sun, X Ling, J Guo, ... Nature Electronics 3 (8), 466-472, 2020 | 211 | 2020 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 205 | 2015 |
| Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402, 2019 | 195 | 2019 |
| Atomically thin femtojoule memristive device H Zhao, Z Dong, H Tian, D DiMarzi, MG Han, L Zhang, X Yan, F Liu, ... Advanced Materials 29 (47), 1703232, 2017 | 184 | 2017 |
| Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing I Sanchez Esqueda, X Yan, C Rutherglen, A Kane, T Cain, P Marsh, Q Liu, ... ACS nano 12 (7), 7352-7361, 2018 | 158 | 2018 |
| High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure X Yan, IS Esqueda, J Ma, J Tice, H Wang Applied Physics Letters 112 (3), 2018 | 158 | 2018 |
| Low-symmetry two-dimensional materials for electronic and photonic applications H Tian, J Tice, R Fei, V Tran, X Yan, L Yang, H Wang Nano Today 11 (6), 763-777, 2016 | 152 | 2016 |
| Emulating bilingual synaptic response using a junction-based artificial synaptic device H Tian, X Cao, Y Xie, X Yan, A Kostelec, D DiMarzio, C Chang, LD Zhao, ... ACS nano 11 (7), 7156-7163, 2017 | 134 | 2017 |
| A dynamically reconfigurable ambipolar black phosphorus memory device H Tian, B Deng, ML Chin, X Yan, H Jiang, SJ Han, V Sun, Q Xia, M Dubey, ... ACS nano 10 (11), 10428-10435, 2016 | 116 | 2016 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 104 | 2015 |
| Progress and challenges for memtransistors in neuromorphic circuits and systems X Yan, JH Qian, VK Sangwan, MC Hersam Advanced Materials 34 (48), 2108025, 2022 | 87 | 2022 |
| High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K B Wang, M Xiao, X Yan, HY Wong, J Ma, K Sasaki, H Wang, Y Zhang Applied Physics Letters 115 (26), 2019 | 74 | 2019 |
| Spatial-temporal imaging of anisotropic photocarrier dynamics in black phosphorus B Liao, H Zhao, E Najafi, X Yan, H Tian, J Tice, AJ Minnich, H Wang, ... Nano Letters 17 (6), 3675-3680, 2017 | 74 | 2017 |
| Strained GaN quantum-well FETs on single crystal bulk AlN substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ... Applied Physics Letters 110 (6), 2017 | 70 | 2017 |
| Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ... Applied physics letters 104 (19), 2014 | 69 | 2014 |
| High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 2015 | 68 | 2015 |
| Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing IEEE Electron Device Letters 37 (1), 16-19, 2015 | 60 | 2015 |
| High conductive gate leakage current channels induced by In segregation around screw-and mixed-type threading dislocations in lattice-matched InxAl1− xN/GaN heterostructures J Song, FJ Xu, XD Yan, F Lin, CC Huang, LP You, TJ Yu, XQ Wang, ... Applied Physics Letters 97 (23), 2010 | 58 | 2010 |
| TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration HY Wong, M Xiao, B Wang, YK Chiu, X Yan, J Ma, K Sasaki, H Wang, ... IEEE Journal of the Electron Devices Society 8, 992-1000, 2020 | 52 | 2020 |
| Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN M Xiao, Z Du, J Xie, E Beam, X Yan, K Cheng, H Wang, Y Cao, Y Zhang Applied Physics Letters 116 (5), 2020 | 51 | 2020 |
Han WangUniversity of Hong KongПодтвержден адрес электронной почты в домене hku.hk
