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Petr Kuznetsov
Petr Kuznetsov
Институт радиотехники и электроники РАН
Подтвержден адрес электронной почты в домене ire216.msk.su
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Процитировано
Процитировано
Год
A note on the mathematical theory of correlated random points
PI Kuznetsov, RL Stratonovich
Non-linear transformations of stochastic processes, 101-115, 1965
521965
Growth of Bi2Te3 films and other phases of Bi-Te system by MOVPE
PI Kuznetsov, VO Yapaskurt, BS Shchamkhalova, VD Shcherbakov, ...
Journal of crystal growth 455, 122-128, 2016
362016
Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators
S Kovalev, KJ Tielrooij, JC Deinert, I Ilyakov, N Awari, M Chen, ...
npj Quantum Materials 6 (1), 84, 2021
332021
Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS (0001) and ZnCdS (0001) substrates grown by MOVPE
PI Kuznetsov, VA Jitov, GG Yakushcheva, BS Shchamkhalova, ...
Physica E: Low-dimensional Systems and Nanostructures 17, 516-517, 2003
232003
Metalorganic vapor phase epitaxy growth of ternary tetradymite Bi2Te3− xSex compounds
PI Kuznetsov, GG Yakushcheva, VA Luzanov, AG Temiryazev, ...
Journal of crystal growth 409, 56-61, 2015
212015
Resonatorless Optical Bistability near the Excitonic Resonance of ZnSe
VP Gribkovskii, LG Zimin, SV Gaponenko, IE Malinovskii, PI Kuznetsov, ...
physica status solidi (b) 150 (2), 761-764, 1988
201988
Fiber optic lossy mode resonance based sensor for aggressive liquids
PI Kuznetsov, DP Sudas, EA Savelyev
Sensors and Actuators A: Physical 321, 112576, 2021
192021
Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures
SV Averin, PI Kuznetsov, VA Zhitov, LY Zakharov, VM Kotov, NV Alkeev
Solid-State Electronics 114, 135-140, 2015
192015
To absolute invariance and invariance up to ε in the theory of differential equations: Part 2
NN Luzin, PI Kuznetsov
Doklady Akademii nauk SSSR= Proceedings of the USSR Academy of Sciences 51 …, 1946
171946
Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures
SV Averin, PI Kuznetsov, VA Zhitov, NV Alkeev, VM Kotov, LY Zakharov, ...
Technical Physics 57, 1514-1518, 2012
162012
MOVPE deposition of Sb2Te3 and other phases of Sb-Te system on sapphire substrate
PI Kuznetsov, BS Shchamkhalova, VO Yapaskurt, VD Shcherbakov, ...
Journal of Crystal Growth 471, 1-7, 2017
152017
Lossy mode resonance fiber-optic sensors based on niobium pentoxide thin film
PI Kuznetsov, DP Sudas, VO Yapaskurt, EA Savelyev
Optical Materials Express 11 (8), 2650-2664, 2021
142021
Formation of fiber tapers by chemical etching for application in fiber sensors and lasers
PI Kuznetsov, DP Sudas, EA Savel’Ev
Instruments and Experimental Techniques 63, 516-521, 2020
142020
Optical Absorption near Excitonic Resonance of MOCVD‐Grown ZnSe Single Crystals
VP Gribkovskii, LG Zimin, SV Gaponenko, IE Malinovskii, PI Kuznetsov, ...
physica status solidi (b) 158 (1), 359-366, 1990
141990
Convergence of random processes and limit theorems of the theory of probability
YV Prokhorov
Theory of Probability and Its Applications 1 (2), 117-238, 1956
141956
Terahertz photoconductive antenna based on a topological insulator nanofilm
KA Kuznetsov, DA Safronenkov, PI Kuznetsov, GK Kitaeva
Applied Sciences 11 (12), 5580, 2021
132021
MOVPE growth and study of ZnCdSe/ZnSSe MQW structures for green VCSELs
PI Kuznetsov, GG Yakushcheva, VA Jitov, LY Zakharov, ...
physica status solidi c 3 (4), 771-775, 2006
132006
Topological Insulator Films for Terahertz Photonics
KA Kuznetsov, SA Tarasenko, PM Kovaleva, PI Kuznetsov, DV Lavrukhin, ...
Nanomaterials 12 (21), 3779, 2022
122022
Transmission spectrum alteration of a silica fiber taper while covering lateral surface with heterostructure of ZnTe/Bi2Te3 thin film
PI Kuznetsov, VA Jitov, EI Golant, EA Savelyev, DP Sudas, ...
Physica Scripta 94 (2), 025802, 2019
122019
MOVPE growth and transport characterization of Bi2− xSbxTe3− ySey films
PI Kuznetsov, GG Yakushcheva, BS Shchamkhalova, VA Jitov, ...
Journal of Crystal Growth 483, 216-222, 2018
122018
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