Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations R Vidya, P Ravindran, H Fjellvåg, BG Svensson, E Monakhov, ...
Physical Review B 83 (4), 045206, 2011
199 2011 Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, MK Linnarsson
Journal of applied physics 98 (4), 2005
142 2005 Zinc oxide: bulk growth, role of hydrogen and Schottky diodes EV Monakhov, AY Kuznetsov, BG Svensson
Journal of Physics D: Applied Physics 42 (15), 153001, 2009
95 2009 Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si EV Monakhov, BS Avset, A Hallén, BG Svensson
Physical Review B 65 (23), 233207, 2002
86 2002 Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
85 2009 Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon M Mikelsen, EV Monakhov, G Alfieri, BS Avset, BG Svensson
Physical Review B 72 (19), 195207, 2005
85 2005 Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO R Schifano, EV Monakhov, U Grossner, BG Svensson
Applied Physics Letters 91 (19), 2007
81 2007 Vacancy clustering and acceptor activation in nitrogen-implanted ZnO TM Børseth, F Tuomisto, JS Christensen, EV Monakhov, BG Svensson, ...
Physical Review B 77 (4), 045204, 2008
80 2008 Thin films of In2O3 by atomic layer deposition using In (acac) 3 O Nilsen, R Balasundaraprabhu, EV Monakhov, N Muthukumarasamy, ...
Thin Solid Films 517 (23), 6320-6322, 2009
70 2009 Identification of substitutional Li in KM Johansen, A Zubiaga, I Makkonen, F Tuomisto, PT Neuvonen, ...
Physical Review B 83 (24), 245208, 2011
69 2011 Lithium and electrical properties of ZnO L Vines, EV Monakhov, R Schifano, W Mtangi, FD Auret, BG Svensson
Journal of Applied Physics 107 (10), 2010
68 2010 Evidence for identification of the divacancy-oxygen center in Si G Alfieri, EV Monakhov, BS Avset, BG Svensson
Physical Review B 68 (23), 233202, 2003
67 2003 Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films A Thøgersen, M Rein, E Monakhov, J Mayandi, S Diplas
Journal of Applied Physics 109 (11), 2011
66 2011 Effect of heat treatment on ITO film properties and ITO/p-Si interface R Balasundaraprabhu, EV Monakhov, N Muthukumarasamy, O Nilsen, ...
Materials Chemistry and Physics 114 (1), 425-429, 2009
66 2009 Development of radiation tolerant semiconductor detectors for the Super-LHC M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
64 2005 Radiation-hard semiconductor detectors for SuperLHC M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
64 2005 The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ...
Applied Physics Letters 98 (18), 2011
62 2011 Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO TM Børseth, F Tuomisto, JS Christensen, W Skorupa, EV Monakhov, ...
Physical Review B 74 (16), 161202, 2006
62 2006 Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide G Alfieri, EV Monakhov, BG Svensson, A Hallén
Journal of applied physics 98 (11), 2005
58 2005 Ion mass effect on vacancy-related deep levels in Si induced by ion implantation EV Monakhov, J Wong-Leung, AY Kuznetsov, C Jagadish, BG Svensson
Physical Review B 65 (24), 245201, 2002
54 2002 