Dispersive optical bistability in stratified structures J Danckaert, K Fobelets, I Veretennicoff, G Vitrant, R Reinisch
Physical Review B 44 (15), 8214, 1991
96 1991 A GaAs pressure sensor based on resonant tunnelling diodes K Fobelets, R Vounckx, G Borghs
Journal of Micromechanics and Microengineering 4 (3), 123, 1994
62 1994 Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance SH Olsen, AG O'Neill, DJ Norris, AG Cullis, NJ Woods, J Zhang, ...
Semiconductor science and technology 17 (7), 655, 2002
50 2002 Capacitances in double-barrier tunneling structures J Genoe, C Van Hoof, W Van Roy, JH Smet, K Fobelets, RP Mertens, ...
IEEE transactions on electron devices 38 (9), 2006-2012, 1991
47 1991 High density micro-pyramids with silicon nanowire array for photovoltaic applications T Rahman, M Navarro-Cía, K Fobelets
Nanotechnology 25 (48), 485202, 2014
45 2014 Two-sided silicon nanowire array/bulk thermoelectric power generator B Xu, W Khouri, K Fobelets
IEEE electron device letters 35 (5), 596-598, 2014
39 2014 In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures C Gatzke, SJ Webb, K Fobelets, RA Stradling
Semiconductor science and technology 13 (4), 399, 1998
39 1998 MOS gated Si: SiGe quantum wells formed by anodic oxidation JC Yeoh, PW Green, TJ Thornton, S Kaya, K Fobelets, JM Fernández
Semiconductor science and technology 13 (12), 1442, 1998
34 1998 Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators B Xu, K Fobelets
Journal of Applied Physics 115 (21), 2014
25 2014 Thermoelectric Performance of B Xu, C Li, K Thielemans, M Myronov, K Fobelets
IEEE Transactions on Electron Devices 59 (12), 3193-3198, 2012
25 2012 Microwave oscillator, an antenna therefor and methods of manufacture S Brebels, K Fobelets, P Pieters, E Beyne, G Borghs
US Patent 5,675,295, 1997
24 1997 pnp resonant tunneling light emitting transistorJ Genoe, C Van Hoof, K Fobelets, R Mertens, G Borghs
Applied physics letters 61 (9), 1051-1053, 1992
24 1992 Terahertz imaging using strained-Si MODFETs as sensors YM Meziani, E García-García, JE Velázquez-Pérez, D Coquillat, ...
Solid-State Electronics 83, 113-117, 2013
22 2013 Field-effect transistors using silicon nanowires prepared by electroless chemical etching M Zaremba-Tymieniecki, C Li, K Fobelets, ZAK Durrani
IEEE electron device letters 31 (8), 860-862, 2010
22 2010 In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes J Genoe, K Fobelets, C Van Hoof, G Borghs
Physical Review B 52 (19), 14025, 1995
22 1995 Mechanisms for enhancement of sensing performance in CMOS ISFET arrays using reactive ion etching N Moser, C Panteli, K Fobelets, P Georgiou
Sensors and Actuators B: Chemical 292, 297-307, 2019
21 2019 Characterization of knitted coils for e-textiles K Fobelets, K Thielemans, A Mathivanan, C Papavassiliou
IEEE Sensors Journal 19 (18), 7835-7840, 2019
21 2019 Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect IV Minin, OV Minin, J Salvador-Sánchez, JA Delgado-Notario, ...
Optics letters 46 (13), 3061-3064, 2021
19 2021 Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si: SiGe depletion-mode n-MODFET V Gaspari, K Fobelets, JE Velazquez-Perez, R Ferguson, K Michelakis, ...
Applied surface science 224 (1-4), 390-393, 2004
19 2004 A review of thermal rectification in solid-state devices FK Malik, K Fobelets
Journal of Semiconductors 43 (10), 103101, 2022
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