| Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate MH Eissa, A Malignaggi, R Wang, M Elkhouly, K Schmalz, AC Ulusoy, ... IEEE Journal of Solid-State Circuits 53 (9), 2532-2542, 2018 | 112 | 2018 |
| Characterization of Si//Si quantum wells by space-charge spectroscopy K Schmalz, IN Yassievich, H Rücker, HG Grimmeiss, H Frankenfeld, ... Physical review B 50 (19), 14287, 1994 | 85 | 1994 |
| On the electrical activity of oxygen in silicon P Gaworzewski, K Schmalz physica status solidi (a) 55 (2), 699-707, 1979 | 81 | 1979 |
| A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology B Laemmle, K Schmalz, JC Scheytt, R Weigel, D Kissinger IEEE Transactions on Microwave Theory and Techniques 61 (5), 2185-2194, 2013 | 80 | 2013 |
| Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits K Schmalz, N Rothbart, PFX Neumaier, J Borngräber, HW Hübers, ... IEEE Transactions on Microwave Theory and Techniques 65 (5), 1807-1818, 2017 | 79 | 2017 |
| Correlation between the Cu‐related luminescent center and a deep level in silicon HB Erzgräber, K Schmalz Journal of applied physics 78 (6), 4066-4068, 1995 | 77 | 1995 |
| Analysis of human breath by millimeter-wave/terahertz spectroscopy N Rothbart, O Holz, R Koczulla, K Schmalz, HW Hübers Sensors 19 (12), 2719, 2019 | 76 | 2019 |
| A Subharmonic Receiver in SiGe Technology for 122 GHz Sensor Applications K Schmalz, W Winkler, J Borngraber, W Debski, B Heinemann, JC Scheytt Solid-State Circuits, IEEE Journal of 45 (9), 1644-1656, 2010 | 69 | 2010 |
| Terahertz gas-phase spectroscopy: chemometrics for security and medical applications PFX Neumaier, K Schmalz, J Borngräber, R Wylde, HW Hübers Analyst 140 (1), 213-222, 2015 | 60 | 2015 |
| A 245 GHz LNA in SiGe technology K Schmalz, J Borngraber, Y Mao, H Rucker, R Weber IEEE Microwave and Wireless Components Letters 22 (10), 533-535, 2012 | 54 | 2012 |
| A 245 GHz transmitter in SiGe technology K Schmalz, J Borngräber, B Heinemann, H Rücker, JC Scheytt 2012 IEEE Radio Frequency Integrated Circuits Symposium, 195-198, 2012 | 54 | 2012 |
| DLTS study on deep level defects in Cz‐p‐Si due to heat treatment at 600 to 900° C K Schmalz, FG Kirscht, H Klose, H Richter, K Tittelbach‐Helmrich physica status solidi (a) 100 (2), 567-582, 1987 | 54 | 1987 |
| Oxygen‐Related Donors Formed at 600 C in Silicon in Dependence on Oxygen and Carbon Content P Gaworzewski, K Schmalz physica status solidi (a) 77 (2), 571-582, 1983 | 54 | 1983 |
| 245 GHz SiGe transmitter with integrated antenna and external PLL K Schmalz, R Wang, J Borngräber, W Debski, W Winkler, C Meliani 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013 | 53 | 2013 |
| On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 C K Schmalz, P Gaworzewski physica status solidi (a) 64 (1), 151-158, 1981 | 45 | 1981 |
| 245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy K Schmalz, J Borngräber, W Debski, M Elkhouly, R Wang, PFX Neumaier, ... IEEE Transactions on Terahertz Science and Technology 6 (2), 318-327, 2016 | 44 | 2016 |
| On the kinetics of thermal donors in oxygen‐rich silicon in the range from 450 to 900° C P Gaworzewski, K Schmalz physica status solidi (a) 58 (2), K223-K226, 1980 | 41 | 1980 |
| Thermal hole emission from Si/Si1-xGex/Si quantum wells by deep level transient spectroscopy O Chretien, R Apetz, L Vescan, A Souifi, H Luth, K Schmalz, JJ Koulmann Journal of applied physics 78 (9), 5439-5447, 1995 | 38 | 1995 |
| A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power MH Eissa, A Malignaggi, M Ko, K Schmalz, J Borngräber, AC Ulusoy, ... International Journal of Microwave and Wireless Technologies 10 (5-6), 562-569, 2018 | 37 | 2018 |
| 122 GHz ISM-band transceiver concept and silicon ICs for low-cost receiver in SiGe BiCMOS K Schmalz, W Winkler, J Borngräber, W Debski, B Heinemann, JC Scheytt 2010 IEEE MTT-S International Microwave Symposium, 1332-1335, 2010 | 37 | 2010 |
