Klaus Schmalz
Klaus Schmalz
Verified email at ihp-microelectronics.com
Cited by
Cited by
On the electrical activity of oxygen in silicon
P Gaworzewski, K Schmalz
physica status solidi (a) 55 (2), 699-707, 1979
Characterization of Si//Si quantum wells by space-charge spectroscopy
K Schmalz, IN Yassievich, H Rücker, HG Grimmeiss, H Frankenfeld, ...
Physical review B 50 (19), 14287, 1994
Correlation between the Cu‐related luminescent center and a deep level in silicon
HB Erzgräber, K Schmalz
Journal of applied physics 78 (6), 4066-4068, 1995
A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology
B Laemmle, K Schmalz, JC Scheytt, R Weigel, D Kissinger
IEEE transactions on microwave theory and techniques 61 (5), 2185-2194, 2013
A Subharmonic Receiver in SiGe Technology for 122 GHz Sensor Applications
K Schmalz, W Winkler, J Borngraber, W Debski, B Heinemann, JC Scheytt
Solid-State Circuits, IEEE Journal of 45 (9), 1644-1656, 2010
Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate
MH Eissa, A Malignaggi, R Wang, M Elkhouly, K Schmalz, AC Ulusoy, ...
IEEE Journal of Solid-State Circuits 53 (9), 2532-2542, 2018
Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits
K Schmalz, N Rothbart, PFX Neumaier, J Borngräber, HW Hübers, ...
IEEE Transactions on Microwave Theory and Techniques 65 (5), 1807-1818, 2017
Oxygen‐Related Donors Formed at 600° C in Silicon in Dependence on Oxygen and Carbon Content
P Gaworzewski, K Schmalz
physica status solidi (a) 77 (2), 571-582, 1983
A 245 GHz LNA in SiGe technology
K Schmalz, J Borngraber, Y Mao, H Rucker, R Weber
IEEE microwave and wireless components letters 22 (10), 533-535, 2012
DLTS study on deep level defects in Cz‐p‐Si due to heat treatment at 600 to 900° C
K Schmalz, FG Kirscht, H Klose, H Richter, K Tittelbach‐Helmrich
physica status solidi (a) 100 (2), 567-582, 1987
Terahertz gas-phase spectroscopy: chemometrics for security and medical applications
PFX Neumaier, K Schmalz, J Borngräber, R Wylde, HW Hübers
Analyst 140 (1), 213-222, 2015
On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 C
K Schmalz, P Gaworzewski
physica status solidi (a) 64 (1), 151-158, 1981
245 GHz SiGe transmitter with integrated antenna and external PLL
K Schmalz, R Wang, J Borngräber, W Debski, W Winkler, C Meliani
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013
A 245 GHz transmitter in SiGe technology
K Schmalz, J Borngräber, B Heinemann, H Rücker, JC Scheytt
2012 IEEE Radio Frequency Integrated Circuits Symposium, 195-198, 2012
On the kinetics of thermal donors in oxygen‐rich silicon in the range from 450 to 900° C
P Gaworzewski, K Schmalz
physica status solidi (a) 58 (2), K223-K226, 1980
245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy
K Schmalz, J Borngräber, W Debski, M Elkhouly, R Wang, PFX Neumaier, ...
IEEE Transactions on Terahertz Science and Technology 6 (2), 318-327, 2016
Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content
K Schmalz, IN Yassievich, EJ Collart, DJ Gravesteijn
Physical Review B 54 (23), 16799, 1996
Oxygen aggregation in Czochralski-grown silicon heat treated at 450 C under compressive stress
VV Emtsev, BA Andreev, A Misiuk, W Jung, K Schmalz
Applied physics letters 71, 264, 1997
Iron gettering and doping in silicon due to MeV carbon implantation
W Skorupa, R Kögler, K Schmalz, P Gaworzewski, G Morgenstern, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
Tunable 245 GHz transmitter and receiver in SiGe technology for gas spectroscopy
K Schmalz, Y Mao, J Borngräber, P Neumaier, HW Hübers
Electronics Letters 50 (12), 881-882, 2014
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