Al2O3 growth on (100) In0. 53Ga0. 47As initiated by cyclic trimethylaluminum and hydrogen plasma exposures AD Carter, WJ Mitchell, BJ Thibeault, JJM Law, MJW Rodwell Applied physics express 4 (9), 091102, 2011 | 66 | 2011 |
Influence of gate metallization processes on the electrical characteristics of high-k/In0. 53Ga0. 47As interfaces GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ... Journal of Vacuum Science & Technology B 29 (4), 2011 | 51 | 2011 |
GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas K Shinohara, C King, AD Carter, EJ Regan, A Arias, J Bergman, ... IEEE Electron Device Letters 39 (3), 417-420, 2018 | 42 | 2018 |
THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS M Urteaga, A Carter, Z Griffith, R Pierson, J Bergman, A Arias, P Rowell, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 35-41, 2016 | 38 | 2016 |
Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ... 2013 Symposium on VLSI Technology, T246-T247, 2013 | 26 | 2013 |
GaN-based multi-channel transistors with lateral gate for linear and efficient millimeter-wave power amplifiers K Shinohara, C King, EJ Regan, J Bergman, AD Carter, A Arias, ... 2019 IEEE MTT-S International Microwave Symposium (IMS), 1133-1135, 2019 | 18 | 2019 |
III-V MOSFETs: scaling laws, scaling limits, fabrication processes MJW Rodwell, U Singisetti, M Wistey, GJ Burek, A Carter, A Baraskar, ... Indium Phosphide & Related Materials (IPRM), 2010 International Conference …, 2010 | 17 | 2010 |
Co-doping of In x Ga 1− x As with silicon and tellurium for improved ultra-low contact resistance JJM Law, AD Carter, S Lee, CY Huang, H Lu, MJW Rodwell, AC Gossard Journal of Crystal Growth 378, 92-95, 2013 | 13 | 2013 |
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ... 2013 International Conference on Indium Phosphide and Related Materials …, 2013 | 13 | 2013 |
Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ... Applied Physics Letters 103 (20), 2013 | 11 | 2013 |
Do SEII Electrons Really Degrade SEM Image Quality? GH Bernstein, AD Carter, DC Joy Scanning: The Journal of Scanning Microscopies 35 (1), 1-6, 2013 | 11 | 2013 |
Si/InP Heterogeneous Integration Techniques from the Wafer-Scale (Hybrid Wafer Bonding) to the Discrete Transistor (Micro-Transfer Printing) AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ... 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018 | 10 | 2018 |
Wafer-scale InP/Si CMOS 3D Integration using low-temperature oxide bonding A Carter, M Urteaga, P Rowell, S Hong, R Patti, C Petteway Proc. IPRM, 2015 | 9 | 2015 |
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ... 71st Device Research Conference, 1-2, 2013 | 8 | 2013 |
A 30 GSample/s InP/CMOS sample-hold amplifier with active droop correction SK Kim, S Daneshgar, AD Carter, MJ Choe, M Urteaga, MJW Rodwell 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 6 | 2016 |
A W-Band transmitter channel with 16dBm output power and a receiver channel with 58.6 mW DC power consumption using heterogeneously integrated InP HBT and Si CMOS technologies ASH Ahmed, A Simsek, AA Farid, AD Carter, M Urteaga, MJW Rodwell 2019 IEEE MTT-S International Microwave Symposium (IMS), 654-657, 2019 | 5 | 2019 |
Q-band InP/CMOS receiver and transmitter beamformer channels fabricated by 3D heterogeneous integration AD Carter, ME Urteaga, ZM Griffith, KJ Lee, J Roderick, P Rowell, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 1760-1763, 2017 | 5 | 2017 |
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth L Sanghoon, JJM Law, AD Carter, BJ Thibeault, W Mitchell, ... IEEE Electron Device Lett 33 (11), 1553-1555, 2012 | 5 | 2012 |
Substitutional-gate MOSFETs with composite (In0. 53Ga0. 47As/InAs/In0. 53Ga0. 47As) channels and self-aligned MBE source–drain regrowth S Lee, JJM Law, AD Carter, BJ Thibeault, W Mitchell, V Chobpattana, ... IEEE Electron Device Letters 33 (11), 1553, 2012 | 5 | 2012 |
60 nm gate length Al2O3/ In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth AD Carter, JJM Law, E Lobisser, GJ Burek, WJ Mitchell, BJ Thibeault, ... 69th Device Research Conference, 19-20, 2011 | 5 | 2011 |