Ren Xibiao
Ren Xibiao
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Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers
C Zhang, CP Chuu, X Ren, MY Li, LJ Li, C Jin, MY Chou, CK Shih
Science advances 3 (1), e1601459, 2017
Ultrastiff and strong graphene fibers via full‐scale synergetic defect engineering
Z Xu, Y Liu, X Zhao, L Peng, H Sun, Y Xu, X Ren, C Jin, P Xu, M Wang, ...
Advanced Materials 28 (30), 6449-6456, 2016
Tailoring the thermal and electrical transport properties of graphene films by grain size engineering
T Ma, Z Liu, J Wen, Y Gao, X Ren, H Chen, C Jin, XL Ma, N Xu, ...
Nature communications 8 (1), 1-9, 2017
All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures
J Shi, M Liu, J Wen, X Ren, X Zhou, Q Ji, D Ma, Y Zhang, C Jin, H Chen, ...
Advanced Materials 27 (44), 7086-7092, 2015
Fabrication of MoSe2 nanoribbons via an unusual morphological phase transition
Y Chen, P Cui, X Ren, C Zhang, C Jin, Z Zhang, CK Shih
Nature communications 8 (1), 1-9, 2017
Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
JH Meng, XW Zhang, HL Wang, XB Ren, CH Jin, ZG Yin, X Liu, H Liu
Nanoscale 7 (38), 16046-16053, 2015
Growth of polar hexagonal boron nitride monolayer on nonpolar copper with unique orientation
J Li, Y Li, J Yin, X Ren, X Liu, C Jin, W Guo
Small 12 (27), 3645-3650, 2016
Low-temperature growth of two-dimensional layered chalcogenide crystals on liquid
Y Zhou, B Deng, Y Zhou, X Ren, J Yin, C Jin, Z Liu, H Peng
Nano letters 16 (3), 2103-2107, 2016
Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2
J Hong, C Wang, H Liu, X Ren, J Chen, G Wang, J Jia, M Xie, C Jin, W Ji, ...
Nano letters 17 (11), 6653-6660, 2017
Preparation of twisted bilayer graphene via the wetting transfer method
Y Hou, X Ren, J Fan, G Wang, Z Dai, C Jin, W Wang, Y Zhu, S Zhang, ...
ACS Applied Materials & Interfaces 12 (36), 40958-40967, 2020
Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride
X Ren, J Dong, P Yang, J Li, G Lu, T Wu, H Wang, W Guo, Z Zhang, ...
Physical Review Materials 3 (1), 014004, 2019
Multiple-ellipse fitting method to precisely measure the positions of atomic columns in a transmission electron microscope image
Q Zhang, CH Jin, HT Xu, LY Zhang, XB Ren, Y Ouyang, XJ Wang, XJ Yue, ...
Micron 113, 99-104, 2018
Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment
Y Xia, B Wang, J Zhang, Y Feng, B Li, X Ren, H Tian, J Xu, W Ho, H Xu, ...
2D Materials 5 (4), 041005, 2018
Deriving 2D M 2 X 3 (M= Mo, W, X= S, Se) by periodic assembly of chalcogen vacancy lines in their MX 2 counterparts
X Wang, X Guan, X Ren, T Liu, W Huang, J Cao, C Jin
Nanoscale 12 (15), 8285-8293, 2020
Atomic-precision fabrication of quasi-full-space grain boundaries in two-dimensional hexagonal boron nitride
X Ren, X Wang, C Jin
Nano Letters 19 (12), 8581-8589, 2019
Lateral and Vertical MoSe2–MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration
T Chen, D Ding, J Shi, G Wang, L Kou, X Zheng, X Ren, X Liu, C Jin, ...
The journal of physical chemistry letters 10 (17), 5027-5035, 2019
Grain boundary motion in two-dimensional hexagonal boron nitride
X Ren, C Jin
ACS nano 14 (10), 13512-13523, 2020
Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2–MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy
Y Dai, X Ren, J Zhang, J Liu, H Liu, W Ho, X Dai, C Jin, M Xie
ACS applied materials & interfaces 11 (46), 43766-43773, 2019
Exit-wave phase retrieval from a single high-resolution transmission electron microscopy image of a weak-phase object
F Lin, XB Ren, WP Zhou, LY Zhang, Y Xiao, Q Zhang, HT Xu, H Li, CH Jin
Micron 114, 23-31, 2018
Mass transport induced structural evolution and healing of sulfur vacancy lines and Mo chain in monolayer MoS2
XW Wang, LF Hou, W Huang, XB Ren, W Ji, CH Jin
Rare Metals 41 (1), 333-341, 2022
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