Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh
Applied Physics Letters 82 (10), 1601-1603, 2003
159 2003 Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu
Applied Physics Letters 90 (6), 2007
125 2007 A free‐standing high‐output power density thermoelectric device based on structure‐ordered PEDOT: PSS Z Li, H Sun, CL Hsiao, Y Yao, Y Xiao, M Shahi, Y Jin, A Cruce, X Liu, ...
Advanced Electronic Materials 4 (2), 1700496, 2018
110 2018 Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang
Applied Physics Letters 90 (4), 2007
89 2007 Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ...
Physical review letters 103 (26), 264301, 2009
71 2009 Electronic-grade GaN (0001)/Al2O3 (0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target M Junaid, CL Hsiao, J Palisaitis, J Jensen, PO Persson, L Hultman, ...
Applied Physics Letters 98 (14), 2011
64 2011 Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material V Darakchieva, K Lorenz, NP Barradas, E Alves, B Monemar, M Schubert, ...
Applied Physics Letters 96 (8), 2010
50 2010 Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors CL Hsiao, HC Hsu, LC Chen, CT Wu, CW Chen, M Chen, LW Tu, ...
Applied Physics Letters 91 (18), 2007
42 2007 Review of GaN thin film and nanorod growth using magnetron sputter epitaxy A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao
Applied Sciences 10 (9), 3050, 2020
41 2020 Polycrystalline to single-crystalline InN grown on Si (111) substrates by plasma-assisted molecular-beam epitaxy CL Hsiao, LW Tu, M Chen, ZW Jiang, NW Fan, YJ Tu, KR Wang
Japanese journal of applied physics 44 (8L), L1076, 2005
39 2005 Effect of strain on low-loss electron energy loss spectra of group-III nitrides J Palisaitis, CL Hsiao, M Junaid, J Birch, L Hultman, POÅ Persson
Physical Review B 84 (24), 245301, 2011
37 2011 Energy relaxation of InN thin films DJ Jang, GT Lin, CL Wu, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 91 (9), 2007
37 2007 High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ...
Applied Physics Letters 92 (11), 2008
36 2008 Polarization-resolved fine-structure splitting of zero-dimensional In Ga N excitons S Amloy, YT Chen, KF Karlsson, KH Chen, HC Hsu, CL Hsiao, LC Chen, ...
Physical Review B 83 (20), 201307, 2011
34 2011 Auger recombination in InN thin films DJ Jang, GT Lin, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 92 (4), 2008
34 2008 Structural anisotropy of nonpolar and semipolar InN epitaxial layers V Darakchieva, MY Xie, N Franco, F Giuliani, B Nunes, E Alves, CL Hsiao, ...
Journal of Applied Physics 108 (7), 2010
33 2010 Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry V Darakchieva, M Schubert, T Hofmann, B Monemar, CL Hsiao, TW Liu, ...
Applied Physics Letters 95 (20), 2009
33 2009 Epitaxial GaN nanorods free from strain and luminescent defects HW Seo, QY Chen, MN Iliev, LW Tu, CL Hsiao, JK Mean, WK Chu
Applied physics letters 88 (15), 2006
32 2006 Buffer controlled GaN nanorods growth on Si (111) substrates by plasma-assisted molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, HW Seo, QY Chen, WK Chu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
32 2006 Room-temperature heteroepitaxy of single-phase Al1− xInxN films with full composition range on isostructural wurtzite templates CL Hsiao, J Palisaitis, M Junaid, POÅ Persson, J Jensen, QX Zhao, ...
Thin Solid Films 524, 113-120, 2012
31 2012