| Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy FT Reis, D Mencaraglia, SO Saad, I Séguy, M Oukachmih, P Jolinat, ... Synthetic metals 138 (1-2), 33-37, 2003 | 72 | 2003 |
| Nanostructure of self-assembled rod-coil block copolymer films for photovoltaic applications T Heiser, G Adamopoulos, M Brinkmann, U Giovanella, S Ould-Saad, ... Thin Solid Films 511, 219-223, 2006 | 62 | 2006 |
| Polyaniline-doped benzene sulfonic acid/epoxy resin composites: structural, morphological, thermal and dielectric behaviors B Belaabed, S Lamouri, N Naar, P Bourson, S Ould Saad Hamady Polymer journal 42 (7), 546-554, 2010 | 61 | 2010 |
| GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 S Gautier, C Sartel, S Ould-Saad, J Martin, A Sirenko, A Ougazzaden Journal of Crystal Growth 298, 428-432, 2007 | 57 | 2007 |
| Optical, electrical and structural properties of nano-pyramidal ZnO films grown on glass substrate by spray pyrolysis technique A Bedia, FZ Bedia, M Aillerie, N Maloufi, SOS Hamady, O Perroud, ... Optical Materials 36 (7), 1123-1130, 2014 | 49 | 2014 |
| Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011 | 47 | 2011 |
| Monitoring deprotonation of gallic acid by Raman spectroscopy J Huguenin, S Ould Saad Hamady, P Bourson Journal of Raman Spectroscopy 46 (11), 1062-1066, 2015 | 40 | 2015 |
| Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ... Journal of Crystal Growth 310 (5), 944-947, 2008 | 40 | 2008 |
| Interface state effects in GaN Schottky diodes A Ahaitouf, H Srour, SOS Hamady, N Fressengeas, A Ougazzaden, ... Thin Solid Films 522, 345-351, 2012 | 38 | 2012 |
| Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices G Adamopoulos, T Heiser, U Giovanella, S Ould-Saad, ... Thin Solid Films 511, 371-376, 2006 | 37 | 2006 |
| Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy T Baghdadli, SOS Hamady, S Gautier, T Moudakir, B Benyoucef, ... physica status solidi c 6 (S2 2), S1029-S1032, 2009 | 29 | 2009 |
| Numerical simulation of InGaN Schottky solar cell SOS Hamady, A Adaine, N Fressengeas Materials Science in Semiconductor Processing 41, 219-225, 2016 | 28 | 2016 |
| Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements FT Reis, D Mencaraglia, SO Saad, I Séguy, M Oukachmih, P Jolinat, ... Journal of non-crystalline solids 338, 599-602, 2004 | 26 | 2004 |
| Simulation study of a new InGaN p-layer free Schottky based solar cell A Adaine, SOS Hamady, N Fressengeas Superlattices and Microstructures 96, 121-133, 2016 | 25 | 2016 |
| MOVPE growth study of BxGa (1− x) N on GaN template substrate S Gautier, C Sartel, SOS Hamady, N Maloufi, J Martin, F Jomard, ... Superlattices and Microstructures 40 (4-6), 233-238, 2006 | 18 | 2006 |
| Studies of buried interfaces Cu (In, Ga) Se2/CdS XPS and electrical investigations B Canava, J Vigneron, A Etcheberry, D Guimard, PP Grand, ... Thin Solid Films 431, 289-295, 2003 | 18 | 2003 |
| XPS and electrical studies of buried interfaces in Cu (In, Ga) Se2 solar cells B Canava, J Vigneron, A Etcheberry, D Guimard, JF Guillemoles, D Lincot, ... Thin Solid Films 403, 425-431, 2002 | 15 | 2002 |
| Effects of structural defects and polarization charges in InGaN-based double-junction solar cell A Adaine, SOS Hamady, N Fressengeas Superlattices and Microstructures 107, 267-277, 2017 | 14 | 2017 |
| Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen C Sartel, S Gautier, SOS Hamady, N Maloufi, J Martin, A Sirenko, ... Superlattices and Microstructures 40 (4-6), 476-482, 2006 | 13 | 2006 |
| Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu (In, Ga) Se2 and a-Si: H cases D Mencaraglia, SO Saad, Z Djebbour Thin Solid Films 431, 135-142, 2003 | 12 | 2003 |
Nicolas FressengeasUniversité de LorraineVerified email at univ-lorraine.fr
