HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
231 2015 Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
143 2017 Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2 Se3 LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ...
The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017
97 2017 W Te2 thin films grown by beam-interrupted molecular beam epitaxy LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ...
2D Materials 4 (2), 025044, 2017
58 2017 Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy AT Barton, R Yue, S Anwar, H Zhu, X Peng, S McDonnell, N Lu, R Addou, ...
Microelectronic Engineering 147, 306-309, 2015
54 2015 Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2 Se3 LA Walsh, AJ Green, R Addou, W Nolting, CR Cormier, AT Barton, ...
ACS nano 12 (6), 6310-6318, 2018
47 2018 Dislocation driven spiral and non-spiral growth in layered chalcogenides Y Nie, AT Barton, R Addou, Y Zheng, LA Walsh, SM Eichfeld, R Yue, ...
Nanoscale 10 (31), 15023-15034, 2018
30 2018 WSe (2− x) Tex alloys grown by molecular beam epitaxy AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
21 2019 Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen‐Removal of the Native Tellurium Oxide CM Smyth, G Zhou, AT Barton, RM Wallace, CL Hinkle
Advanced Materials Interfaces 8 (7), 2002050, 2021
10 2021 Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2 Se3 AT Barton, LA Walsh, CM Smyth, X Qin, R Addou, C Cormier, PK Hurley, ...
ACS applied materials & interfaces 11 (35), 32144-32150, 2019
9 2019 2D Mater. 4, 045019 (2017) R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
9 ACS Nano 9, 474 (2015) R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
8 Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- SRM Anwar, WG Vandenberghe, G Bersuker, D Veksler, G Verzellesi, ...
IEEE Transactions on Electron Devices 64 (9), 3794-3801, 2017
7 2017 Transition Metal Doping of MoS2 : A Correlated Experimental and Theoretical Study L Walsh, L Ansari, S Monaghan, K Zhussupbekov, A Zhussupbekova, ...
Electrochemical Society Meeting Abstracts 237, 847-847, 2020
2020 Molecular Beam Epitaxy of Van der Waals Materials for Applications in Novel Logic and Memory Devices AT Barton
The University of Texas at Dallas, 2019
2019 INTERFACE REACTION AND FERMI LEVEL PINNING MECHANISMS BETWEEN PALLADIUM CONTACTS AND TELLURIUM FILMS GROWN BY MOLECULAR BEAM EPITAXY CM Smyth, G Zhou, AT Barton, RM Wallace, CL Hinkle
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D …, 2018
2018 