| Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ... Applied Physics Letters 91 (7), 2007 | 123 | 2007 |
| Bandgap bowing in BGaN thin films A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ... Applied Physics Letters 93 (8), 2008 | 71 | 2008 |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ... Journal of crystal growth 370, 57-62, 2013 | 68 | 2013 |
| Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111) Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ... Applied Physics Letters 102 (1), 2013 | 67 | 2013 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 66 | 2012 |
| GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 S Gautier, C Sartel, S Ould-Saad, J Martin, A Sirenko, A Ougazzaden Journal of Crystal Growth 298, 428-432, 2007 | 57 | 2007 |
| Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011 | 47 | 2011 |
| BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas A Ougazzaden, S Gautier, C Sartel, N Maloufi, J Martin, F Jomard Journal of crystal growth 298, 316-319, 2007 | 46 | 2007 |
| Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy E Cicek, R McClintock, Z Vashaei, Y Zhang, S Gautier, CY Cho, ... Applied Physics Letters 102 (5), 2013 | 45 | 2013 |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ... Journal of Crystal Growth 315 (1), 160-163, 2011 | 43 | 2011 |
| Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates A Ougazzaden, DJ Rogers, FH Teherani, T Moudakir, S Gautier, ... Journal of Crystal Growth 310 (5), 944-947, 2008 | 40 | 2008 |
| Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors V Ravindran, M Boucherit, A Soltani, S Gautier, T Moudakir, J Dickerson, ... Applied Physics Letters 100 (24), 2012 | 35 | 2012 |
| Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE G Orsal, N Maloufi, S Gautier, M Alnot, AA Sirenko, M Bouchaour, ... Journal of Crystal Growth 310 (23), 5058-5062, 2008 | 34 | 2008 |
| Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ... Nanotechnology 23 (45), 455707, 2012 | 33 | 2012 |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ... physica status solidi (a) 209 (1), 25-28, 2012 | 32 | 2012 |
| V2O5 gas sensors: A review R Alrammouz, M Lazerges, J Pironon, IB Taher, A Randi, Y Halfaya, ... Sensors and Actuators A: Physical 332, 113179, 2021 | 31 | 2021 |
| Characteristics of the surface microstructures in thick InGaN layers on GaN Y El Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ... Optical Materials Express 3 (8), 1111-1118, 2013 | 29 | 2013 |
| Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy T Baghdadli, SOS Hamady, S Gautier, T Moudakir, B Benyoucef, ... physica status solidi c 6 (S2 2), S1029-S1032, 2009 | 29 | 2009 |
| Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ... Materials Science and Engineering: B 178 (2), 142-148, 2013 | 28 | 2013 |
| Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer … S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ... Journal of crystal growth 370, 63-67, 2013 | 23 | 2013 |
