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JH Edgar
JH Edgar
Подтвержден адрес электронной почты в домене ksu.edu - Главная страница
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Процитировано
Процитировано
Год
Substrates for gallium nitride epitaxy
L Liu, JH Edgar
Materials Science and Engineering: R: Reports 37 (3), 61-127, 2002
9782002
Wet etching of GaN, AlN, and SiC: a review
D Zhuang, JH Edgar
Materials Science and Engineering: R: Reports 48 (1), 1-46, 2005
8542005
Properties of group III nitrides
JH Edgar
Inst of Engineering & Technology, 1994
6251994
Photonics with hexagonal boron nitride
JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov
Nature Reviews Materials 4 (8), 552-567, 2019
4252019
Prospects for device implementation of wide band gap semiconductors
JH Edgar
Journal of materials research 7 (1), 235-252, 1992
3151992
Infrared hyperbolic metasurface based on nanostructured van der Waals materials
P Li, I Dolado, FJ Alfaro-Mozaz, F Casanova, LE Hueso, S Liu, JH Edgar, ...
Science 359 (6378), 892-896, 2018
3082018
Ultralow-loss polaritons in isotopically pure boron nitride
AJ Giles, S Dai, I Vurgaftman, T Hoffman, S Liu, L Lindsay, CT Ellis, ...
Nature materials 17 (2), 134-139, 2018
2712018
Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
JA Powell, JB Petit, JH Edgar, IG Jenkins, LG Matus, JW Yang, P Pirouz, ...
Applied physics letters 59 (3), 333-335, 1991
1941991
related Semiconductors
JH Edgar, S Strite, I Akasaki, H Amano, CWG Nitride
INSEPC, 1999
1931999
Raman scattering studies on single-crystalline bulk AlN under high pressures
M Kuball, JM Hayes, AD Prins, NWA Van Uden, DJ Dunstan, Y Shi, ...
Applied physics letters 78 (6), 724-726, 2001
1602001
Reconfigurable infrared hyperbolic metasurfaces using phase change materials
TG Folland, A Fali, ST White, JR Matson, S Liu, NA Aghamiri, JH Edgar, ...
Nature communications 9 (1), 1-7, 2018
1262018
Single photon emission from plasma treated 2D hexagonal boron nitride
ZQ Xu, C Elbadawi, TT Tran, M Kianinia, X Li, D Liu, TB Hoffman, ...
Nanoscale 10 (17), 7957-7965, 2018
1152018
Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
JH Edgar, L Liu, B Liu, D Zhuang, J Chaudhuri, M Kuball, S Rajasingam
Journal of crystal growth 246 (3-4), 187-193, 2002
1082002
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
C Yuan, J Li, L Lindsay, D Cherns, JW Pomeroy, S Liu, JH Edgar, ...
Communications physics 2 (1), 1-8, 2019
1022019
Phonon lifetimes in bulk AlN and their temperature dependence
M Kuball, JM Hayes, Y Shi, JH Edgar
Applied Physics Letters 77 (13), 1958-1960, 2000
1012000
Single crystal growth of millimeter-sized monoisotopic hexagonal boron nitride
S Liu, R He, L Xue, J Li, B Liu, JH Edgar
Chemistry of materials 30 (18), 6222-6225, 2018
912018
Micromagnetometry of two-dimensional ferromagnets
M Kim, P Kumaravadivel, J Birkbeck, W Kuang, SG Xu, DG Hopkinson, ...
Nature Electronics 2 (10), 457-463, 2019
892019
Isotope engineering of van der Waals interactions in hexagonal boron nitride
TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ...
Nature materials 17 (2), 152-158, 2018
892018
Two-dimensional excitons in three-dimensional hexagonal boron nitride
XK Cao, B Clubine, JH Edgar, JY Lin, HX Jiang
Applied physics letters 103 (19), 191106, 2013
872013
Self-assembled monolayers of alkylphosphonic acid on GaN substrates
T Ito, SM Forman, C Cao, F Li, CR Eddy Jr, MA Mastro, RT Holm, ...
Langmuir 24 (13), 6630-6635, 2008
842008
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