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Artem Baranov
Artem Baranov
St Petersburg Academic University
Подтвержден адрес электронной почты в домене spbau.ru
Название
Процитировано
Процитировано
Год
Problems in Atomic Science and Technology
AI Baranov
High-Energy Physics and Nuclear Physics Series 1 (13), 15, 1975
281975
Study of GaP/Si heterojunction solar cells
AS Gudovskikh, KS Zelentsov, AI Baranov, DA Kudryashov, IA Morozov, ...
Energy Procedia 102, 56-63, 2016
272016
Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures
AI Baranov, AS Gudovskikh, EV Nikitina, AY Egorov
Technical Physics Letters 39 (12), 1117-1120, 2013
232013
Si doped GaP layers grown on Si wafers by low temperature PE-ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Journal of Renewable and Sustainable Energy 10 (2), 021001, 2018
202018
Copper vapor laser with a pulse repetition frequency of 100 kHz
MA Alaev, AI Baranov, NM Vereshchagin, IN Gnedin, YP Zherebtsov, ...
Soviet Journal of Quantum Electronics 6 (5), 610, 1976
191976
The study of latex sphere lithography for high aspect ratio dry silicon etching
I Morozov, A Gudovskikh, A Uvarov, A Baranov, V Sivakov, D Kudryashov
physica status solidi (a) 217 (4), 1900535, 2020
182020
Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
physica status solidi (a) 216 (10), 1800617, 2019
172019
Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
AV Uvarov, AS Gudovskikh, VN Nevedomskiy, AI Baranov, ...
Journal of Physics D: Applied Physics 53 (34), 345105, 2020
112020
GaNP-based photovoltaic device integrated on Si substrate
LN Dvoretckaia, AD Bolshakov, AM Mozharov, MS Sobolev, DA Kirilenko, ...
Solar Energy Materials and Solar Cells 206, 110282, 2020
92020
Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon
DA Kudryashov, AS Gudovskikh, AI Baranov, IA Morozov, ...
physica status solidi (a) 217 (4), 1900534, 2020
92020
Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy
AI Baranov, AS Gudovskikh, DA Kudryashov, AA Lazarenko, IA Morozov, ...
Journal of Applied Physics 123 (16), 161418, 2018
82018
Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (2 …, 2018
82018
Pulse-periodic electric-discharge laser with a low-pressure controlled gap
AI Baranov, KV Gurkov, MI Lomaev, DP Patrushev, VF Tarasenko
Pribory i Tekhnika Ehksperimenta, 108-111, 1994
81994
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ...
Nanotechnology 31 (24), 244003, 2020
72020
PROCHNOST METALLOKERAMICHESKOGO TVERDOGO SPLAVA KARBID VOLFRAMA KOBALT V ZAVISIMOSTI OT TEMPERATURY I RAZMERA ZEREN
GS Kreimer, OS Safonova, AI Baranov
ZHURNAL TEKHNICHESKOI FIZIKI 25 (1), 117-124, 1955
61955
A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
AS Gudovskikh, DA Kudryashov, AI Baranov, AV Uvarov, IA Morozov
Technical Physics Letters 47 (1), 96-98, 2021
52021
Dipolar cation accumulation at the interfaces of perovskite light-emitting solar cells
DS Gets, GA Verkhogliadov, EY Danilovskiy, AI Baranov, SV Makarov, ...
Journal of Materials Chemistry C 8 (47), 16992-16999, 2020
52020
Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si
AI Baranov, AS Gudovskikh, DA Kudryashov, IA Morozov, AM Mozharov, ...
Journal of Physics: Conference Series 1124 (4), 041034, 2018
52018
Capacitance characterization of GaP/n-Si structures grown by PE-ALD
AI Baranov, AS Gudovskikh, A Darga, S Le Gall, JP Kleider
Journal of Physics: Conference Series 917 (5), 052027, 2017
52017
n‐GaP/p‐Si Heterojunction Solar Cells Fabricated by PE‐ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
physica status solidi c 14 (10), 1700150, 2017
52017
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