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Robert Karsthof
Robert Karsthof
Universitetet i Oslo
Подтвержден адрес электронной почты в домене smn.uio.no
Название
Процитировано
Процитировано
Год
Oxide bipolar electronics: materials, devices and circuits
M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ...
Journal of Physics D: Applied Physics 49 (21), 213001, 2016
992016
Semi‐transparent NiO/ZnO UV photovoltaic cells
R Karsthof, P Räcke, H Von Wenckstern, M Grundmann
physica status solidi (a) 213 (1), 30-37, 2016
842016
Interface recombination current in type II heterostructure bipolar diodes
M Grundmann, R Karsthof, H von Wenckstern
ACS applied materials & interfaces 6 (17), 14785-14789, 2014
622014
Conversion pathways of primary defects by annealing in proton-irradiated -type -SiC
R Karsthof, ME Bathen, A Galeckas, L Vines
Physical Review B 102 (18), 184111, 2020
472020
pn‐Heterojunction Diodes with n‐Type In2O3
H von Wenckstern, D Splith, S Lanzinger, F Schmidt, S Müller, P Schlupp, ...
Advanced Electronic Materials 1 (4), 1400026, 2015
372015
Polaronic interacceptor hopping transport in intrinsically doped nickel oxide
R Karsthof, M Grundmann, AM Anton, F Kremer
Physical Review B 99 (23), 235201, 2019
342019
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium
R Karsthof, AM Anton, F Kremer, M Grundmann
Physical review materials 4 (3), 034601, 2020
292020
Transparent JFETs Based on-NiO/-ZnO Heterojunctions
R Karsthof, H von Wenckstern, M Grundmann
IEEE Transactions on Electron Devices 62 (12), 3999-4003, 2015
292015
Nickel oxide–based heterostructures with large band offsets
R Karsthof, H von Wenckstern, J Zúniga-Pérez, C Deparis, M Grundmann
physica status solidi (b) 257 (7), 1900639, 2020
212020
Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3
A Langørgen, C Zimmermann, Y Kalmann Frodason, ...
Journal of Applied Physics 131 (11), 2022
162022
Semitransparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms
R Karsthof, H von Wenckstern, M Grundmann
Journal of Vacuum Science & Technology B 34 (4), 2016
142016
Several approaches to bipolar oxide diodes with high rectification
M Grundmann, FL Schein, R Karsthof, P Schlupp, H Von Wenckstern
Advances in Science and Technology 93, 252-259, 2014
122014
On the T2 trap in zinc oxide thin films
M Schmidt, M Ellguth, R Karsthof, H v. Wenckstern, R Pickenhain, ...
physica status solidi (b) 249 (3), 588-595, 2012
122012
Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC
R Karsthof, M Etzelmüller Bathen, A Kuznetsov, L Vines
Journal of Applied Physics 131 (3), 2022
92022
Identification of LiNi and VNi acceptor levels in doped nickel oxide
R Karsthof, H von Wenckstern, VS Olsen, M Grundmann
APL Materials 8 (12), 2020
92020
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ...
APL Materials 11 (3), 2023
52023
Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
ME Bathen, A Galeckas, R Karsthof, A Delteil, V Sallet, AY Kuznetsov, ...
Physical Review B 104 (4), 045120, 2021
32021
Semi‐transparent NiO/ZnO UV photovoltaic cells (Phys. Status Solidi A 1∕ 2016)
R Karsthof, P Räcke, H von Wenckstern, M Grundmann
physica status solidi (a) 213 (1), 224-224, 2016
32016
Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
A Galeckas, R Karsthof, K Gana, A Kok, ME Bathen, L Vines, A Kuznetsov
physica status solidi (a) 220 (10), 2200449, 2023
12023
Origin of enhanced conductivity in low dose ion irradiated oxides
J Borgersen, R Karsthof, V Rønning, L Vines, H Von Wenckstern, ...
AIP Advances 13 (1), 2023
12023
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Статьи 1–20